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公开(公告)号:US20220270985A1
公开(公告)日:2022-08-25
申请号:US17582285
申请日:2022-01-24
发明人: Sergey Ananiev , Andreas Bauer , Michael Goroll , Maria Heidenblut , Stefan Kaiser , Gunther Mackh , Kabula Mutamba , Reinhard Pufall , Georg Reuther
IPC分类号: H01L23/00
摘要: A semiconductor chip having a crack stop structure is disclosed. The crack stop structure includes one or more recesses formed in the semiconductor chip. The one or more recesses extend adjacent to and along a periphery of the semiconductor chip. The one or more recesses are filled with a metal material. The metal material has an intrinsic tensile stress at room temperature that induces compressive stress in at least a region of the periphery of the semiconductor chip.