公开(公告)号：US11081417B2

公开(公告)日：2021-08-03

申请号：US16514853

申请日：2019-07-17

Applicant: Infineon Technologies AG

Inventor： Sook Woon Chan ,  Chau Fatt Chiang ,  Kok Yau Chua ,  Soon Lock Goh ,  Swee Kah Lee ,  Joachim Mahler ,  Mei Chin Ng ,  Beng Keh See ,  Guan Choon Matthew Nelson Tee

IPC: H01L23/552 ,  H01L23/31 ,  C09D5/24 ,  C23C18/16 ,  C23C18/18 ,  H01L23/29 ,  C09D5/00 ,  C09D201/00 ,  C23C18/34 ,  H01L21/56 ,  H01L23/66 ,  H01L23/00

Abstract: A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

公开(公告)号：US10396007B2

公开(公告)日：2019-08-27

申请号：US15448018

申请日：2017-03-02

Applicant: Infineon Technologies AG

Inventor： Sook Woon Chan ,  Chau Fatt Chiang ,  Kok Yau Chua ,  Soon Lock Goh ,  Swee Kah Lee ,  Joachim Mahler ,  Mei Chin Ng ,  Beng Keh See ,  Guan Choon Matthew Nelson Tee

IPC: H01L23/552 ,  H01L23/31 ,  C09D5/00 ,  C09D201/00 ,  C23C18/16 ,  C23C18/18 ,  C23C18/34 ,  H01L21/56 ,  H01L23/29 ,  H01L23/66 ,  H01L23/00 ,  C09D5/24

Abstract: A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.