公开(公告)号：US20170294299A1

公开(公告)日：2017-10-12

申请号：US15485232

申请日：2017-04-12

Applicant: Infineon Technologies AG

Inventor： Heiko Assmann ,  Felix Braun ,  Marcus Dankelmann ,  Stefan Doering ,  Karsten Friedrich ,  Udo Goetschkes ,  Andreas Greiner ,  Ralf Rudolf ,  Jens Schneider

IPC: H01L21/027 ,  H01L21/265 ,  H01L21/266 ,  H01L21/324 ,  H01L21/02 ,  H01L29/06 ,  H01L21/268

CPC classification number: H01L21/027 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/0271 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L29/0607

Abstract: In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.

公开(公告)号：US10468248B2

公开(公告)日：2019-11-05

申请号：US15485232

申请日：2017-04-12

Applicant: Infineon Technologies AG

Inventor： Heiko Aßmann ,  Felix Braun ,  Marcus Dankelmann ,  Stefan Doering ,  Karsten Friedrich ,  Udo Goetschkes ,  Andreas Greiner ,  Ralf Rudolf ,  Jens Schneider

IPC: H01L21/02 ,  H01L21/265 ,  H01L21/027 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L29/06

Abstract: In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.