公开(公告)号：US20230230903A1

公开(公告)日：2023-07-20

申请号：US18085746

申请日：2022-12-21

Applicant: Infineon Technologies AG

Inventor： Hooi Boon TEOH ,  Hao ZHUANG ,  Oliver BLANK ,  Paul Armand CALO ,  Markus DINKEL ,  Josef Höglauer ,  Daniel Hölzl ,  Wee Aun JASON LIM ,  Gerhard Thomas Nöbauer ,  Ralf OTREMBA ,  Martin Pölzl ,  Ying Pok SAM ,  Xaver Schlögel ,  Chee Voon TAN

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L23/49513 ,  H01L24/32 ,  H01L24/05 ,  H01L24/03 ,  H01L24/83 ,  H01L2224/32245 ,  H01L2224/291 ,  H01L24/29 ,  H01L2224/26145 ,  H01L2224/04026 ,  H01L2224/0361 ,  H01L2224/83801

Abstract: A semiconductor chip is provided. The semiconductor chip may include a front side including a control chip contact and a first controlled chip contact, a back side including a second controlled chip contact, a backside metallization formed over the back side in contact with the second controlled chip contact, and a stop region extending at least partially along an outer edge of the back side between a contact portion of the backside metallization and the outer edge of the back side. The contact portion is configured to be attached to an electrically conductive structure by a die attach material, a surface of the stop region is recessed with respect to a surface of the contact portion, and/or the surface of the stop region has a lower wettability with respect to the die attach material than the contact portion.

公开(公告)号：US20160113127A1

公开(公告)日：2016-04-21

申请号：US14882678

申请日：2015-10-14

Applicant: Infineon Technologies AG

Inventor： Toni SALMINEN ,  Markus DINKEL

IPC: H05K5/00 ,  H05K3/28 ,  H05K3/32 ,  H05K3/40

Abstract: Electronic module comprising at least one electronic chip, an encapsulation structure in which the at least one electronic chip is at least partially encapsulated, an electrically conductive structure for the electrically conductive contacting of the at least one electronic chip, and an electrically insulating structure which is at least partially formed from a material having a low modulus of elasticity, wherein a variation of the value of the modulus of elasticity is at the most 10 GPa in a temperature range between −40° C. and +150° C.

Abstract translation: 电子模块包括至少一个电子芯片，其中所述至少一个电子芯片至少部分地被封装的封装结构，用于所述至少一个电子芯片的导电接触的导电结构，以及电绝缘结构， 至少部分地由具有低弹性模量的材料形成，其中在-40℃和+ 150℃之间的温度范围内弹性模量值的变化值最多为10GPa。