公开(公告)号：US10347754B2

公开(公告)日：2019-07-09

申请号：US15704269

申请日：2017-09-14

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Christian Jaeger ,  Johannes Georg Laven ,  Max Christian Seifert ,  Antonio Vellei

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/41 ,  H01L29/66 ,  H01L29/739 ,  H01L29/866

Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.

公开(公告)号：US20190319122A1

公开(公告)日：2019-10-17

申请号：US16456191

申请日：2019-06-28

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Christian Jaeger ,  Johannes Georg Laven ,  Max Christian Seifert ,  Antonio Vellei

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/866 ,  H01L29/41

Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.

公开(公告)号：US10910487B2

公开(公告)日：2021-02-02

申请号：US16456191

申请日：2019-06-28

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Christian Jaeger ,  Johannes Georg Laven ,  Max Christian Seifert ,  Antonio Vellei

IPC: H01L29/739 ,  H01L29/40 ,  H01L29/06 ,  H01L29/41 ,  H01L29/66 ,  H01L29/866

Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.

公开(公告)号：US20190355841A1

公开(公告)日：2019-11-21

申请号：US16413815

申请日：2019-05-16

Applicant: Infineon Technologies AG

Inventor： Benedikt Stoib ,  Hans-Joachim Schulze ,  Max Christian Seifert

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/10

Abstract: A power semiconductor device includes a semiconductor body having a front side coupled to a first load terminal structure and a backside coupled to a second load terminal structure. A front side structure arranged at the front side is at least partially included in the semiconductor body and defines a front side active region configured to conduct a load current between the load terminal structures. The front side structure includes first and second lateral edge portions and a first corner portion that forms a transition between the lateral edge portions. A drift region included in the semiconductor body is configured to carry the load current. A backside emitter region arranged in the semiconductor body in contact with the second load terminal has a net dopant concentration higher than a net dopant concentration of the drift region.

公开(公告)号：US20180076309A1

公开(公告)日：2018-03-15

申请号：US15704269

申请日：2017-09-14

Applicant: Infineon Technologies AG

Inventor： Alexander Philippou ,  Christian Jaeger ,  Johannes Georg Laven ,  Max Christian Seifert ,  Antonio Vellei

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/866 ,  H01L29/41 ,  H01L29/66

CPC classification number: H01L29/7397 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41 ,  H01L29/66348 ,  H01L29/7396 ,  H01L29/866

Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.