公开(公告)号：US20180358483A1

公开(公告)日：2018-12-13

申请号：US16105193

申请日：2018-08-20

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Heiko FROEHLICH ,  Maik STEGEMANN ,  Mirko VOGT

IPC: H01L31/0232 ,  H01L31/02 ,  H01L31/0203

CPC classification number: H01L31/02327 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/14629 ,  H01L31/02016 ,  H01L31/0203

Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.

公开(公告)号：US20210013087A1

公开(公告)日：2021-01-14

申请号：US16922711

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Andre ROETH ,  Boris BINDER ,  Thoralf KAUTZSCH ,  Uwe RUDOLPH ,  Maik STEGEMANN ,  Mirko VOGT

IPC: H01L21/764 ,  H01L21/3065

Abstract: In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.

公开(公告)号：US20200300886A1

公开(公告)日：2020-09-24

申请号：US16860528

申请日：2020-04-28

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Steffen BIESELT ,  Heiko FROEHLICH ,  Andre ROETH ,  Maik STEGEMANN ,  Mirko VOGT ,  Bernhard WINKLER

IPC: G01P15/125 ,  G01P15/08

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

公开(公告)号：US20220326275A1

公开(公告)日：2022-10-13

申请号：US17851292

申请日：2022-06-28

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Steffen BIESELT ,  Heiko FROEHLICH ,  Andre ROETH ,  Maik STEGEMANN ,  Mirko VOGT ,  Bernhard WINKLER

IPC: G01P15/125 ,  G01P15/08 ,  H01L21/02 ,  H01L21/768 ,  B81C1/00

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

公开(公告)号：US20180130914A1

公开(公告)日：2018-05-10

申请号：US15345015

申请日：2016-11-07

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Heiko FROEHLICH ,  Maik STEGEMANN ,  Mirko VOGT

IPC: H01L31/0232 ,  H01L31/0203 ,  H01L31/02

CPC classification number: H01L31/02327 ,  H01L31/02016 ,  H01L31/0203

Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.

公开(公告)号：US20170010301A1

公开(公告)日：2017-01-12

申请号：US15200299

申请日：2016-07-01

Applicant: Infineon Technologies AG

Inventor： Steffen BIESELT ,  Heiko FROEHLICH ,  Thoralf KAUTZSCH ,  Andre ROETH ,  Maik STEGEMANN ,  Mirko VOGT ,  Bernhard WINKLER

IPC: G01P15/125 ,  G01P15/08

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Abstract translation: 提供了一种电容式微机电装置。 电容微机电装置包括半导体衬底，支撑结构，电极元件，弹簧元件和地震块。 支撑结构，例如极，悬架或柱，固定地连接到可以包括硅的半导体衬底。 电极元件固定地连接到支撑结构。 此外，地震质量体通过弹簧元件连接到支撑结构，使得地震质量相对于电极元件可移动，可偏转或可移动。 此外，地震质量和电极元件形成具有取决于地震质量块和电极元件之间位移的电容的电容器。