公开(公告)号：US20150203350A1

公开(公告)日：2015-07-23

申请号：US14675672

申请日：2015-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Thoralf KAUTZSCH ,  Boris BINDER ,  Torsten HELM ,  Stefan KOLB ,  Marc PROBST ,  Uwe RUDOLPH

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/0038

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract translation: 描述和描述了与半导体制造相关的实施例和具有半导体结构的半导体器件。

公开(公告)号：US20210013087A1

公开(公告)日：2021-01-14

申请号：US16922711

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Andre ROETH ,  Boris BINDER ,  Thoralf KAUTZSCH ,  Uwe RUDOLPH ,  Maik STEGEMANN ,  Mirko VOGT

IPC: H01L21/764 ,  H01L21/3065

Abstract: In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.