公开(公告)号：US20180358483A1

公开(公告)日：2018-12-13

申请号：US16105193

申请日：2018-08-20

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Heiko FROEHLICH ,  Maik STEGEMANN ,  Mirko VOGT

IPC: H01L31/0232 ,  H01L31/02 ,  H01L31/0203

CPC classification number: H01L31/02327 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/14629 ,  H01L31/02016 ,  H01L31/0203

Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.

公开(公告)号：US20150203350A1

公开(公告)日：2015-07-23

申请号：US14675672

申请日：2015-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Thoralf KAUTZSCH ,  Boris BINDER ,  Torsten HELM ,  Stefan KOLB ,  Marc PROBST ,  Uwe RUDOLPH

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/0038

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract translation: 描述和描述了与半导体制造相关的实施例和具有半导体结构的半导体器件。

公开(公告)号：US20200300886A1

公开(公告)日：2020-09-24

申请号：US16860528

申请日：2020-04-28

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Steffen BIESELT ,  Heiko FROEHLICH ,  Andre ROETH ,  Maik STEGEMANN ,  Mirko VOGT ,  Bernhard WINKLER

IPC: G01P15/125 ,  G01P15/08

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

公开(公告)号：US20190162600A1

公开(公告)日：2019-05-30

申请号：US16194674

申请日：2018-11-19

Applicant: Infineon Technologies AG

Inventor： Vladislav KOMENKO ,  Heiko FROEHLICH ,  Thoralf KAUTZSCH ,  Andrey KRAVCHENKO

IPC: G01J5/34 ,  G01J5/40 ,  G01J5/08 ,  H01L27/146 ,  H01L31/18

Abstract: An infrared radiation sensor comprises a substrate, a membrane formed in or at the substrate, a first counter electrode, a second counter electrode, and a composite comprising at least two layers of materials having different coefficients of thermal expansion. At least a portion of the membrane forms a deflectable electrode and the deflectable electrode is electrically floating. A first capacitance is formed between the deflectable electrode and the first counter electrode, and a second capacitance is formed between the deflectable electrode and the second counter electrode. The membrane comprises the composite or is supported at the substrate by the composite. The membrane comprises an absorption region configured to cause deformation of the composite by absorbing infrared radiation, the deformation resulting in a deflection of the deflectable electrode, which causes a change of the first and second capacitances.

公开(公告)号：US20210013087A1

公开(公告)日：2021-01-14

申请号：US16922711

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Andre ROETH ,  Boris BINDER ,  Thoralf KAUTZSCH ,  Uwe RUDOLPH ,  Maik STEGEMANN ,  Mirko VOGT

IPC: H01L21/764 ,  H01L21/3065

Abstract: In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.

公开(公告)号：US20220326275A1

公开(公告)日：2022-10-13

申请号：US17851292

申请日：2022-06-28

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Steffen BIESELT ,  Heiko FROEHLICH ,  Andre ROETH ,  Maik STEGEMANN ,  Mirko VOGT ,  Bernhard WINKLER

IPC: G01P15/125 ,  G01P15/08 ,  H01L21/02 ,  H01L21/768 ,  B81C1/00

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

公开(公告)号：US20180130914A1

公开(公告)日：2018-05-10

申请号：US15345015

申请日：2016-11-07

Applicant: Infineon Technologies AG

Inventor： Thoralf KAUTZSCH ,  Heiko FROEHLICH ,  Maik STEGEMANN ,  Mirko VOGT

IPC: H01L31/0232 ,  H01L31/0203 ,  H01L31/02

CPC classification number: H01L31/02327 ,  H01L31/02016 ,  H01L31/0203

Abstract: An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. The encapsulation layer includes at least one subwavelength-based graded index structure provided over the peripheral region of the substrate, and the subwavelength-based graded index structure is configured to redirect the light from a region over the peripheral region onto the optical sensor.

公开(公告)号：US20170010301A1

公开(公告)日：2017-01-12

申请号：US15200299

申请日：2016-07-01

Applicant: Infineon Technologies AG

Inventor： Steffen BIESELT ,  Heiko FROEHLICH ,  Thoralf KAUTZSCH ,  Andre ROETH ,  Maik STEGEMANN ,  Mirko VOGT ,  Bernhard WINKLER

IPC: G01P15/125 ,  G01P15/08

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Abstract translation: 提供了一种电容式微机电装置。 电容微机电装置包括半导体衬底，支撑结构，电极元件，弹簧元件和地震块。 支撑结构，例如极，悬架或柱，固定地连接到可以包括硅的半导体衬底。 电极元件固定地连接到支撑结构。 此外，地震质量体通过弹簧元件连接到支撑结构，使得地震质量相对于电极元件可移动，可偏转或可移动。 此外，地震质量和电极元件形成具有取决于地震质量块和电极元件之间位移的电容的电容器。

公开(公告)号：US20140145281A1

公开(公告)日：2014-05-29

申请号：US14093172

申请日：2013-11-29

Applicant: Infineon Technologies AG

Inventor： Thomas BEVER ,  Henning FEICK ,  Dirk OFFENBERG ,  Stefano PARASCANDOLA ,  Ines UHLIG ,  Thoralf KAUTZSCH ,  Dirk MEINHOLD ,  Hanno MELZNER

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035272 ,  G01S7/4914 ,  H01L27/14806

Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region

Abstract translation: 描述和描绘与光电荷载体的控制相关的实施例。 至少一个实施例提供了包括光转换区域以将光转换成光生电荷载流子的半导体衬底; 用于积累光生电荷载流子的区域; 控制电极结构，其包括多个控制电极，以产生电位分布，使得所述光生载流子基于施加到所述控制电极结构的信号而被引导到所述区域以累积所述光生电荷载流子; 在半导体衬底中的不均匀掺杂分布，以在光转换区域的至少一部分中产生具有垂直场矢量分量的电场