公开(公告)号：US20240030032A1

公开(公告)日：2024-01-25

申请号：US18225030

申请日：2023-07-21

Applicant: Infineon Technologies AG

Inventor： Saurabh ROY ,  Ravi Keshav JOSHI ,  Hans-Joachim SCHULZE ,  Bernhard GOLLER ,  Daria KRASNOZHON

IPC: H01L21/04 ,  H01L29/45 ,  H01L29/16 ,  H01L21/268

CPC classification number: H01L21/0485 ,  H01L29/45 ,  H01L29/1608 ,  H01L21/268

Abstract: The present disclosure generally relates to a method of manufacturing a contact on a silicon carbide semiconductor substrate wherein the method comprises providing a 4H—SiC semiconductor substrate, irradiating a surface area of the 4H—SiC semiconductor substrate with a first thermal annealing laser beam, thereby generating a phase separation of the surface area comprising at least a 3C—SiC layer, and depositing a contact material onto the 3C—SiC layer to form a contact layer on the semiconductor substrate. The disclosure further relates to a silicon carbide semiconductor device with an Ohmic contact comprising a 4H—SiC semiconductor substrate, a 3C—SiC layer, and a contact layer directly in contact with the 3C—SiC layer at the semiconductor surface.

公开(公告)号：US20230238442A1

公开(公告)日：2023-07-27

申请号：US18097656

申请日：2023-01-17

Applicant: Infineon Technologies AG

Inventor： Ravi Keshav JOSHI ,  Romain ESTEVE ,  Saurabh ROY ,  Bernhard GOLLER ,  Werner SCHUSTEREDER ,  Kristijan Luka MLETSCHNIG

IPC: H01L29/45 ,  H01L29/417 ,  H01L23/528 ,  H01L29/40 ,  H01L21/321

CPC classification number: H01L29/45 ,  H01L29/41741 ,  H01L23/528 ,  H01L29/401 ,  H01L21/321

Abstract: A semiconductor device includes a semiconductor substrate and a metal nitride layer above the semiconductor substrate. The metal nitride layer forms at least one interface region with the semiconductor substrate. The at least one interface region includes a first portion of the semiconductor substrate, a first portion of the metal nitride layer, and an interface between the first portion of the semiconductor substrate and the first portion of the metal nitride layer. A concentration of nitrogen content at the first portion of the metal nitride layer is higher than a concentration of nitrogen content at a second portion, of the metal nitride layer, outside the interface region. A distribution of nitrogen content throughout the metal nitride layer may have a maximum concentration at the first portion of the metal nitride layer. Alternatively and/or additionally, a method for producing such a semiconductor device is provided herein.