SEMICONDUCTOR DEVICE WITH SCHOTTKY CONTACT

    公开(公告)号:US20250113592A1

    公开(公告)日:2025-04-03

    申请号:US18374895

    申请日:2023-09-29

    Abstract: In an embodiment, a semiconductor device is provided. The semiconductor device may include a semiconductor body including a first doped region of a first conductivity type and a second doped region of a second conductivity type. The semiconductor device may include a metal structure, in the semiconductor body, overlying the second doped region. The metal structure may include a first sidewall adjacent a first portion of the first doped region, a second sidewall adjacent a second portion of the first doped region, and a third sidewall adjacent the second doped region. The semiconductor device may include a Schottky contact including a junction of the third sidewall of the metal structure with the second doped region.

    SILICON CARBIDE DEVICE WITH SCHOTTKY CONTACT

    公开(公告)号:US20200219972A1

    公开(公告)日:2020-07-09

    申请号:US16733329

    申请日:2020-01-03

    Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

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