公开(公告)号：US10431504B2

公开(公告)日：2019-10-01

申请号：US15052953

申请日：2016-02-25

申请人： Infineon Technologies Austria AG

发明人： Wolfgang Lehnert ,  Rudolf Berger ,  Albert Birner ,  Helmut Brech ,  Oliver Häberlen ,  Guenther Ruhl ,  Roland Rupp

IPC分类号： H01L27/02 ,  H01L29/16 ,  H01L21/8258 ,  H01L21/683 ,  H01L21/20 ,  H01L29/778 ,  H01L27/06 ,  H01L29/20 ,  H01L33/00 ,  H01L29/08 ,  H01L27/085 ,  H01L23/48 ,  H01L29/78

摘要： A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

公开(公告)号：US20160260699A1

公开(公告)日：2016-09-08

申请号：US15052953

申请日：2016-02-25

申请人： Infineon Technologies Austria AG

发明人： Wolfgang Lehnert ,  Rudolf Berger ,  Albert Birner ,  Helmut Brech ,  Oliver Häberlen ,  Guenther Ruhl ,  Roland Rupp

IPC分类号： H01L27/02 ,  H01L29/16 ,  H01L21/8258 ,  H01L29/201 ,  H01L21/683 ,  H01L27/06 ,  H01L21/02 ,  H01L29/20

CPC分类号： H01L21/8258 ,  H01L21/2007 ,  H01L21/6835 ,  H01L23/481 ,  H01L27/0694 ,  H01L27/085 ,  H01L29/0843 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/78 ,  H01L33/0079 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381

摘要： A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

摘要翻译： 具有第一晶格系统的第一晶体材料的半导体盘被接合在基底衬底的工艺表面上，其中在半导体盘和基底衬底之间形成接合层。 通过在由半导体盘形成的第一半导体层上外延生长而形成具有第二不同格子系统的第二晶体材料的第二半导体层。