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公开(公告)号：US11824114B2
公开(公告)日：2023-11-21
申请号：US17985315
申请日：2022-11-11
发明人： Stefan Tegen , Matthias Kroenke
IPC分类号： H01L29/78 , H01L29/40 , H01L29/66 , H01L29/423 , H01L29/739
CPC分类号： H01L29/7813 , H01L29/401 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/4236 , H01L29/42356 , H01L29/42368 , H01L29/66348 , H01L29/66666 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7827
摘要： A transistor device includes a semiconductor substrate having a first major surface, a cell field and an edge termination region laterally surrounding the cell field. The cell field includes: elongate active trenches that extend from the first major surface into the semiconductor substrate, a field plate and a gate electrode being positioned in each elongate active trench, the gate electrode being arranged above and electrically insulated from the field plate; and elongate mesas, each elongate mesa being formed between neighbouring elongate active trenches, the elongate mesas comprising a drift region, a body region on the drift region and a source region on the body region.
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公开(公告)号：US20210234039A1
公开(公告)日：2021-07-29
申请号：US17156720
申请日：2021-01-25
发明人： Stefan Tegen , Matthias Kroenke
摘要： In an embodiment, a method of forming a field plate in an elongate active trench of a transistor device is provided. The elongate active trench includes a first insulating material lining the elongate active trench and surrounding a gap and first conductive material filling the gap. The method includes selectively removing a first portion of the first insulating material using a first etch process, selectively removing a portion of the first conductive material using a second etch process, and forming a field plate in a lower portion of the elongate active trench and selectively removing a second portion of the first insulating material using a third etch process. The first etch process is carried out before the second etch process and the second etch process is carried out before the third etch process.
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公开(公告)号：US20230071984A1
公开(公告)日：2023-03-09
申请号：US17985315
申请日：2022-11-11
发明人： Stefan Tegen , Matthias Kroenke
IPC分类号： H01L29/78 , H01L29/40 , H01L29/66 , H01L29/423 , H01L29/739
摘要： A transistor device includes a semiconductor substrate having a first major surface, a cell field and an edge termination region laterally surrounding the cell field. The cell field includes: elongate active trenches that extend from the first major surface into the semiconductor substrate, a field plate and a gate electrode being positioned in each elongate active trench, the gate electrode being arranged above and electrically insulated from the field plate; and elongate mesas, each elongate mesa being formed between neighbouring elongate active trenches, the elongate mesas comprising a drift region, a body region on the drift region and a source region on the body region.
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公开(公告)号：US20230038354A1
公开(公告)日：2023-02-09
申请号：US17870260
申请日：2022-07-21
摘要： A transistor device includes a semiconductor substrate having a first major surface, a cell field including transistor cells, and an edge termination region laterally surrounding the cell field. Each transistor cell includes a drift region of a first conductivity type, a first body region of a second conductivity type on the drift region, a source region of the first conductivity type on the first body region and a gate electrode. The transistor device further includes an elongate source contact having opposing first and second distal ends, the elongate source contact being in contact with the source region, and a second body region of the second conductivity type positioned in the semiconductor substrate. The second body region has a lateral extent such that it is spaced part from the second distal end of the elongate source contact and extends laterally beyond the first distal end of the elongate source contact.
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公开(公告)号：US11545568B2
公开(公告)日：2023-01-03
申请号：US17156720
申请日：2021-01-25
发明人： Stefan Tegen , Matthias Kroenke
IPC分类号： H01L29/78 , H01L29/40 , H01L29/66 , H01L29/423 , H01L29/739
摘要： In an embodiment, a method of forming a field plate in an elongate active trench of a transistor device is provided. The elongate active trench includes a first insulating material lining the elongate active trench and surrounding a gap and first conductive material filling the gap. The method includes selectively removing a first portion of the first insulating material using a first etch process, selectively removing a portion of the first conductive material using a second etch process, and forming a field plate in a lower portion of the elongate active trench and selectively removing a second portion of the first insulating material using a third etch process. The first etch process is carried out before the second etch process and the second etch process is carried out before the third etch process.
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6.发明授权公开(公告)号：US10164086B2
公开(公告)日：2018-12-25
申请号：US15273400
申请日：2016-09-22
发明人： Stefan Tegen , Dirk Manger
IPC分类号： H01L29/423 , H01L29/78 , H01L29/10 , H01L29/06 , H01L29/66 , H01L21/265 , H01L29/739 , H01L21/8234 , H01L29/45
摘要： A semiconductor device includes a plurality of drift regions of a vertical field effect transistor arrangement arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. The semiconductor device further includes a plurality of compensation regions arranged in the semiconductor substrate. The plurality of compensation regions has a second conductivity type. Each drift region of the plurality of drift regions is arranged adjacent to at least one compensation region of the plurality of compensation regions. The semiconductor device further includes a body region of a transistor structure of the vertical field effect transistor arrangement arranged adjacent to a drift region of the plurality of drift regions. The semiconductor device further includes a gate extending substantially vertically along the body region of the transistor structure for controlling a substantially vertical channel region between a first doping region of the transistor structure and the drift region.
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公开(公告)号：US20150001629A1
公开(公告)日：2015-01-01
申请号：US13932564
申请日：2013-07-01
发明人： Stefan Tegen
IPC分类号： H01L27/088
CPC分类号： H01L29/0847 , H01L27/0629 , H01L27/0886 , H01L29/0657 , H01L29/0696 , H01L29/0865 , H01L29/0869 , H01L29/0882 , H01L29/0886 , H01L29/4236 , H01L29/66795 , H01L29/785
摘要： A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate. The first and second ridges run in a first direction. The semiconductor device further includes a body region disposed in a portion of the semiconductor substrate between the first ridge and the second ridge, and a gate electrode adjacent to the body region. The first and second ridges are connected with the body region. A plurality of further ridges are formed in the body region, the further ridges extending in a second direction intersecting the first direction. The gate electrode runs in the first direction, and the gate electrode is disposed at at least two sides of the further ridges.
摘要翻译： 半导体器件包括从半导体衬底的第一主表面延伸的第一脊和第二脊。 第一和第二脊沿第一方向延伸。 半导体器件还包括设置在第一脊和第二脊之间的半导体衬底的一部分中的主体区域和与身体区域相邻的栅电极。 第一和第二脊与身体区域连接。 在身体区域中形成多个另外的脊，所述另外的脊沿与第一方向相交的第二方向延伸。 栅电极沿第一方向延伸，并且栅电极设置在其它脊的至少两侧。
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公开(公告)号：US20230352582A1
公开(公告)日：2023-11-02
申请号：US18135788
申请日：2023-04-18
发明人： Stefan Tegen , Timothy Henson
CPC分类号： H01L29/7833 , H01L29/6656 , H01L29/66795 , H01L29/665 , H01L29/7851 , H01L29/518
摘要： In an embodiment, a power transistor device includes a substrate formed of crystalline silicon and having a first surface and a second surface opposing the first surface. A field plate formed of polysilicon is electrically connected with the substrate. An interfacial silicon nitride layer is arranged between the polysilicon of the field plate and the crystalline silicon of the substrate.
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公开(公告)号：US20230006059A1
公开(公告)日：2023-01-05
申请号：US17847998
申请日：2022-06-23
摘要： A transistor device includes a semiconductor substrate having a first major surface, a cell field, and an edge termination region laterally surrounding the cell field. The cell field includes elongate trenches that extend from the first major surface into the semiconductor substrate and that are positioned substantially parallel to one another such that one or more inner elongate trenches are arranged between two outermost elongate trenches and elongate mesas, each elongate mesa being formed between neighbouring elongate trenches. The elongate mesas include a drift region, a body region on the drift region and a source region on the body region. In a top view, one or both of the outermost elongate trenches has a different contour from the one or more inner elongate trenches.
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公开(公告)号：US09269711B2
公开(公告)日：2016-02-23
申请号：US13932564
申请日：2013-07-01
发明人： Stefan Tegen
IPC分类号： H01L27/088 , H01L29/66 , H01L29/06 , H01L27/06
CPC分类号： H01L29/0847 , H01L27/0629 , H01L27/0886 , H01L29/0657 , H01L29/0696 , H01L29/0865 , H01L29/0869 , H01L29/0882 , H01L29/0886 , H01L29/4236 , H01L29/66795 , H01L29/785
摘要： A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate. The first and second ridges run in a first direction. The semiconductor device further includes a body region disposed in a portion of the semiconductor substrate between the first ridge and the second ridge, and a gate electrode adjacent to the body region. The first and second ridges are connected with the body region. A plurality of further ridges are formed in the body region, the further ridges extending in a second direction intersecting the first direction. The gate electrode runs in the first direction, and the gate electrode is disposed at at least two sides of the further ridges.
摘要翻译： 半导体器件包括从半导体衬底的第一主表面延伸的第一脊和第二脊。 第一和第二脊沿第一方向延伸。 半导体器件还包括设置在第一脊和第二脊之间的半导体衬底的一部分中的主体区域和与身体区域相邻的栅电极。 第一和第二脊与身体区域连接。 在身体区域中形成多个另外的脊，所述另外的脊沿与第一方向相交的第二方向延伸。 栅电极沿第一方向延伸，并且栅电极设置在其它脊的至少两侧。
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