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公开(公告)号:US20240237293A1
公开(公告)日:2024-07-11
申请号:US18534706
申请日:2023-12-10
Applicant: InnoLux Corporation
Inventor: Ker-Yih KAO , Chung-Jyh LIN , Chin-Ming HUANG , Chien-Lin LAI , Kuo-Sheng YEH
IPC: H05K7/20
CPC classification number: H05K7/20481 , H05K7/20218
Abstract: An electronic device is provided by the present disclosure, wherein the electronic device includes at least one chip unit, a circuit structure electrically connected to the at least one chip unit, and a heat dissipation layer disposed at a side of the at least one chip unit opposite to the circuit structure, wherein the heat dissipation layer includes an insulating material layer and a plurality of silicon carbide particles, the insulating material layer clads the silicon carbide particles, and the silicon carbide particles have rounded-corner structures.
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公开(公告)号:US20240237195A1
公开(公告)日:2024-07-11
申请号:US18534734
申请日:2023-12-11
Applicant: InnoLux Corporation
Inventor: Ker-Yih KAO , Chung-Jyh LIN , Chin-Ming HUANG , Chien-Lin LAI
CPC classification number: H05K1/0272 , H05K1/0306 , H05K1/111 , H05K3/4644 , H05K2201/0209 , H05K2201/064 , H05K2201/066 , H05K2201/10636 , H05K2203/025
Abstract: An electronic device and a manufacturing method of the electronic device are provided by the present disclosure, wherein the electronic device includes at least one chip unit, a circuit structure electrically connected to the at least one chip unit, and a heat dissipation layer disposed at a side of the at least one chip unit opposite to the circuit structure, wherein the heat dissipation layer includes an insulating material layer and a plurality of silicon carbide particles, the insulating material layer clads the silicon carbide particles, and the silicon carbide particles have monocrystal structures.
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公开(公告)号:US20250087547A1
公开(公告)日:2025-03-13
申请号:US18810891
申请日:2024-08-21
Applicant: InnoLux Corporation
Inventor: Chung-Jyh LIN , Yen-Fu LIU , Ju-Li WANG
IPC: H01L23/367 , H01L21/78 , H01L23/00 , H01L23/31
Abstract: An electronic device is provided, including a chip unit, a heat dissipation film, an encapsulation layer, a through hole, and a circuit structure. The chip unit has a first side and a second side opposite to the first side. The heat dissipation film is disposed on the first side. The encapsulation layer surrounds the chip unit and the heat dissipation film. The through hole penetrates the encapsulation layer, and has a first position and a second position. The circuit structure is disposed on the second side. The through hole is electrically connected to the chip unit through the circuit structure. The first position is connected to the circuit structure, and the second position is farther away from the circuit structure than the first position. The first position has a first width, the second position has a second width, and the first width is greater than the second width.
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