公开(公告)号：US20190027458A1

公开(公告)日：2019-01-24

申请号：US16142151

申请日：2018-09-26

Applicant: InnoLux Corporation

Inventor： Yan-Syun WANG ,  Chi-Che TSAI ,  Chien-Feng LI ,  Wei-Yun CHANG ,  Wei-Hsien CHANG ,  Po-Ching LIN

IPC: H01L23/00 ,  H01L21/762 ,  H01L21/02

Abstract: A method for manufacturing an electronic device is disclosed, which includes the following steps: providing a first substrate and modifying a surface of the first substrate to obtain a modified surface; applying silane or derivatives thereof on the modified surface to form an adhesion precursor layer; heat-treating the adhesion precursor layer to form an adhesion layer; forming an inorganic layer on the adhesion layer; and forming an active unit on the inorganic layer, wherein the inorganic layer is disposed between the adhesion layer and the active unit.

公开(公告)号：US20200281068A1

公开(公告)日：2020-09-03

申请号：US16878675

申请日：2020-05-20

Applicant: Innolux Corporation

Inventor： Yan-Syun WANG ,  Chi-Che TSAI ,  Wei-Yen WU ,  I-Yin LI

IPC: H05K1/02 ,  H05K3/10 ,  H05K3/22 ,  H01P3/08

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

公开(公告)号：US20180206329A1

公开(公告)日：2018-07-19

申请号：US15858004

申请日：2017-12-29

Applicant: Innolux Corporation

Inventor： Yan-Syun WANG ,  Chi-Che TSAI ,  Wei-Yen WU ,  I-Yin LI

IPC: H05K1/02 ,  H05K3/10 ,  H05K3/22

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

公开(公告)号：US20170053824A1

公开(公告)日：2017-02-23

申请号：US15239885

申请日：2016-08-18

Applicant: InnoLux Corporation

Inventor： Yan-Syun WANG ,  Chi-Che TSAI ,  Chien-Feng LI ,  Wei yun CHANG ,  Wei-Hsien CHANG ,  Po-Ching LIN

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L24/29 ,  G06F3/00 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/2007 ,  H01L21/7624 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29099 ,  H01L2224/29193

Abstract: An electronic device is disclosed, which comprises: a first substrate; an adhesion layer disposed on the first substrate and comprising a condensation product of silane or derivatives thereof; an inorganic layer disposed on the adhesion layer; and an active unit disposed on the inorganic layer. In addition, the present disclosure also provides a method for manufacturing the aforementioned electronic device.

Abstract translation: 公开了一种电子设备，其包括：第一基板; 粘合层，其设置在所述第一基板上并且包含硅烷或其衍生物的缩合产物; 设置在所述粘合层上的无机层; 以及设置在无机层上的有源单元。 此外，本公开还提供了制造上述电子设备的方法。