公开(公告)号：US09343582B2

公开(公告)日：2016-05-17

申请号：US14675973

申请日：2015-04-01

Applicant: INNOCOM TECHNOLOGY(SHENZHEN) CO., LTD. ,  InnoLux Corporation

Inventor： Kuan-Feng Lee

IPC: H01L31/20 ,  H01L29/04 ,  H01L29/786 ,  H01L29/66 ,  H01L21/027

CPC classification number: H01L29/66742 ,  H01L21/0274 ,  H01L21/0334 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.

Abstract translation: 本发明的一个实施例提供一种薄膜晶体管衬底的制造方法，包括：在第一衬底上依次形成栅电极，覆盖栅电极的栅极绝缘层，活性材料层和光敏材料层; 通过使用半色调掩模进行光刻处理，以形成位于栅电极之上并具有第一凹部和第二凹部的感光保护层; 通过使用光敏保护层作为掩模蚀刻活性物质层以形成活性层; 在所述第一凹部和所述第二凹部的底部移除所述光敏保护层的一部分，以分别暴露所述活性层的第一部分和第二部分; 形成连接到所述第一部分的第一电极; 以及形成连接到所述第二部分的第二电极。

公开(公告)号：US09691881B2

公开(公告)日：2017-06-27

申请号：US15096616

申请日：2016-04-12

Applicant: INNOCOM TECHNOLOGY(SHENZHEN) CO., LTD. ,  InnoLux Corporation

Inventor： Kuan-Feng Lee

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/027 ,  H01L21/033

CPC classification number: H01L29/66742 ,  H01L21/0274 ,  H01L21/0334 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: The invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a protective layer which is above the gate electrode and has a first recess and a second recess; wet etching the active material layer by using the protective layer as a mask to form an active layer; removing a portion of the protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.

公开(公告)号：US08664051B2

公开(公告)日：2014-03-04

申请号：US13764382

申请日：2013-02-11

Applicant: Innocom Technology(Shenzhen) Co., Ltd.

Inventor： Kuan-Feng Lee

IPC: H01L29/786

CPC classification number: H01L29/66742 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869

Abstract: An embodiment of the invention provides a manufacturing method of a thin-film transistor includes: providing a substrate; sequentially forming a gate electrode, a gate insulating layer, and an active layer on the substrate; forming an insulating metal oxide layer covering the active layer, wherein the insulating metal oxide layer including a metal oxide of a first metal; forming a metal layer covering the active layer, wherein the metal layer includes a second metal; forming a source electrode and a drain electrode on the metal layer with a trench separating therebetween; removing the metal layer exposed by the trench; and performing an annealing process to the metal layer and the insulating metal oxide layer, such that the metal layer reacts with the insulating metal oxide layer overlapping the metal layer to form a conducting composite metal oxide layer including the first metal and the second metal.

Abstract translation: 本发明的实施例提供一种薄膜晶体管的制造方法，包括：提供衬底; 在基板上依次形成栅电极，栅极绝缘层和有源层; 形成覆盖有源层的绝缘金属氧化物层，其中所述绝缘金属氧化物层包括第一金属的金属氧化物; 形成覆盖有源层的金属层，其中所述金属层包括第二金属; 在所述金属层上形成源电极和漏电极，其间分开沟槽; 去除由沟槽暴露的金属层; 对所述金属层和所述绝缘金属氧化物层进行退火处理，使得所述金属层与与所述金属层重叠的所述绝缘金属氧化物层反应，形成包含所述第一金属和所述第二金属的导电复合金属氧化物层。

公开(公告)号：US09024318B2

公开(公告)日：2015-05-05

申请号：US13722570

申请日：2012-12-20

Applicant: Innocom Technology (Shenzhen) Co., Ltd. ,  Chimei Innolux Corporation

Inventor： Kuan-Feng Lee

IPC: H01L29/04 ,  H01L31/20 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L21/0274 ,  H01L21/0334 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.

Abstract translation: 本发明的一个实施例提供一种薄膜晶体管衬底的制造方法，包括：在第一衬底上依次形成栅电极，覆盖栅电极的栅极绝缘层，活性材料层和光敏材料层; 通过使用半色调掩模进行光刻处理，以形成位于栅电极之上并具有第一凹部和第二凹部的感光保护层; 通过使用光敏保护层作为掩模蚀刻活性物质层以形成活性层; 在所述第一凹部和所述第二凹部的底部移除所述光敏保护层的一部分，以分别暴露所述活性层的第一部分和第二部分; 形成连接到所述第一部分的第一电极; 以及形成连接到第二部分的第二电极。