公开(公告)号：US20230238278A1

公开(公告)日：2023-07-27

申请号：US17747940

申请日：2022-05-18

Applicant: Innolux Corporation

Inventor： Ching-Wei Chen ,  Yu-Jen Chang ,  Tzu-Yen Chiu ,  Hung-I Tseng ,  Chuan-Ming Yeh ,  Heng-Shen Yeh

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/76816 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/5226

Abstract: A manufacturing method of a package structure of an electronic device, including the following steps, is provided. A first seed layer is formed on a carrier plate. A first metal layer is formed on the first seed layer. A first insulating layer is formed on the first metal layer, wherein the first insulating layer exposes a portion of the first metal layer. A first plasma treatment is performed on the first insulating layer and the exposed portion of the first metal layer. After performing the first plasma treatment, the carrier plate formed with the first seed layer, the first metal layer, and the first insulating layer is placed in a microenvironment controlling box. After taking the carrier plate out of the microenvironment controlling box, a second seed layer is formed on the first insulating layer and the exposed portion of the first metal layer.

公开(公告)号：US12191197B2

公开(公告)日：2025-01-07

申请号：US17747940

申请日：2022-05-18

Applicant: Innolux Corporation

Inventor： Ching-Wei Chen ,  Yu-Jen Chang ,  Tzu-Yen Chiu ,  Hung-I Tseng ,  Chuan-Ming Yeh ,  Heng-Shen Yeh

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A manufacturing method of a package structure of an electronic device, including the following steps, is provided. A first seed layer is formed on a carrier plate. A first metal layer is formed on the first seed layer. A first insulating layer is formed on the first metal layer, wherein the first insulating layer exposes a portion of the first metal layer. A first plasma treatment is performed on the first insulating layer and the exposed portion of the first metal layer. After performing the first plasma treatment, the carrier plate formed with the first seed layer, the first metal layer, and the first insulating layer is placed in a microenvironment controlling box. After taking the carrier plate out of the microenvironment controlling box, a second seed layer is formed on the first insulating layer and the exposed portion of the first metal layer.

公开(公告)号：US20230178447A1

公开(公告)日：2023-06-08

申请号：US17751653

申请日：2022-05-23

Applicant: Innolux Corporation

Inventor： Yu-Jen Chang ,  Ching-Wei Chen ,  Tzu-Yen Chiu ,  Hung-I Tseng ,  Chun-Chin Fan

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/3192 ,  H01L21/02271 ,  H01L21/76873 ,  H01L2924/181 ,  H01L2924/14

Abstract: A method for manufacturing a composite layer circuit structure of an electronic device is provided. First, a first conductive layer is formed on a carrier plate. Next, a first photoresist layer is formed on the first conductive layer. The first photoresist layer includes multiple first openings exposing part of the first conductive layer. Next, a first electroplating layer is formed in the first openings. Then, the first photoresist layer is removed. Then, a first insulating layer is formed on the first conductive layer. The first insulating layer includes multiple second openings exposing part of the first electroplating layer. In the above, at least one heat treatment process is performed on the first electroplating layer before the first insulating layer is formed on the first conductive layer. A temperature when performing at least one heat treatment process is higher than or equal to 40° C. and lower than or equal to 300° C.