公开(公告)号：US20240118614A1

公开(公告)日：2024-04-11

申请号：US18389961

申请日：2023-12-20

Applicant: Inpria Corporation

Inventor： Peter De Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F1/22 ,  G03F1/48 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  G03F7/42

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US11599021B2

公开(公告)日：2023-03-07

申请号：US17736132

申请日：2022-05-04

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： Chawon Koh ,  Tsunehiro Nishi ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  Soo Young Choi

IPC: G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US11886116B2

公开(公告)日：2024-01-30

申请号：US17307223

申请日：2021-05-04

Applicant: Inpria Corporation

Inventor： Peter de Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/11 ,  G03F7/00 ,  G03F7/038 ,  G03F7/42 ,  G03F7/004 ,  G03F1/48 ,  G03F1/22

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US11327398B2

公开(公告)日：2022-05-10

申请号：US16399473

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： Chawon Koh ,  Tsunehiro Nishi ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  Soo Young Choi

IPC: G03F7/004 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  G03F7/20 ,  G03F7/32

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

公开(公告)号：US20210349390A1

公开(公告)日：2021-11-11

申请号：US17307223

申请日：2021-05-04

Applicant: Inpria Corporation

Inventor： Peter de Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/11 ,  G03F7/038 ,  G03F7/004 ,  G03F1/48 ,  G03F7/00 ,  G03F1/22 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US20200348594A1

公开(公告)日：2020-11-05

申请号：US16399473

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd. ,  Inpria Corporation

Inventor： CHAWON KOH ,  TSUNEHIRO NISHI ,  Brian Cardineau ,  Sangyoon Woo ,  Jason Stowers ,  SOO YOUNG CHOI

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  H01L21/311

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.