公开(公告)号：US20250006806A1

公开(公告)日：2025-01-02

申请号：US18346087

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Anand Murthy ,  Alexander Badmaev ,  Zhiyi Chen ,  Debaleena Nandi ,  Tahir Ghani

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: In some implementations, an apparatus may include a substrate having silicon. In addition, the apparatus may include a first layer of a source or drain region of a p-type transistor, the first layer positioned above the substrate, the first layer having boron, silicon and germanium. The apparatus may include a second layer coupled to the source or drain region, the second layer having a metal contact for the source or drain region. Moreover, the apparatus may include a third layer positioned between the first layer and the second layer, the third layer having at least one monolayer having gallium, where the third layer is adjacent to the first layer.

公开(公告)号：US11955482B2

公开(公告)日：2024-04-09

申请号：US16876495

申请日：2020-05-18

Applicant: Intel Corporation

Inventor： Robert Ehlert ,  Timothy Jen ,  Alexander Badmaev ,  Shridhar Hegde ,  Sandrine Charue-Bakker

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/167 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/0847 ,  H01L29/167 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7851

Abstract: Integrated circuit structures having high phosphorous dopant concentrations are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. Each of the epitaxial structures of the first and second source or drain structures includes silicon and phosphorous, the phosphorous having an atomic concentration in a core region of the silicon greater than an atomic concentration in a peripheral region of the silicon.