公开(公告)号：US11652107B2

公开(公告)日：2023-05-16

申请号：US16447874

申请日：2019-06-20

申请人： Intel Corporation

发明人： Nicholas Thomson ,  Ayan Kar ,  Kalyan Kolluru ,  Nathan Jack ,  Rui Ma ,  Mark Bohr ,  Rishabh Mehandru ,  Halady Arpit Rao

IPC分类号： H01L29/06 ,  H01L27/12 ,  H01L27/02 ,  H01L21/84 ,  H01L29/861

CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L27/0255 ,  H01L27/1211 ,  H01L29/8613

摘要： Embodiments include diode devices and transistor devices. A diode device includes a first fin region over a first conductive region and an insulator region, and a second fin region over a second conductive and insulator regions, where the second fin region is laterally adjacent to the first fin region, and the insulator region is between the first and second conductive regions. The diode device includes a first conductive via on the first conductive region, where the first conductive via is vertically adjacent to the first fin region, and a second conductive via on the second conductive region, where the second conductive via is vertically adjacent to the second fin region. The diode device may include conductive contacts, first portions on the first fin region, second portions on the second fin region, and gate electrodes between the first and second portions and the conductive contacts.