公开(公告)号：US20240143882A1

公开(公告)日：2024-05-02

申请号：US17977666

申请日：2022-10-31

Applicant: Intel Corporation

Inventor： Paul Hack ,  Carlos Alberto Jimenez Chavez ,  Scot Zickel ,  Ilan Ronen ,  Koby Zand ,  Leonid Tsukerman ,  John Giacobbe

IPC: G06F30/347 ,  G06F30/343

CPC classification number: G06F30/347 ,  G06F30/343

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed. An example apparatus includes interface circuitry to obtain circuitry logic, the circuitry logic including a plurality of circuit elements logically connected by a plurality of nodes; identifier circuitry to: identify a node within the plurality of nodes for elevation; and identify a layer of an integrated circuit; port adder circuitry to modify the circuitry logic by adding a signal port, the signal port corresponding to a physical terminal in the identified layer; connector circuitry to modify the circuitry logic by connecting the signal port to the identified node; and layout planner circuitry to determine a layout of the integrated circuit based on the modified circuitry logic.

公开(公告)号：US20240234234A9

公开(公告)日：2024-07-11

申请号：US17972923

申请日：2022-10-25

Applicant: Intel Corporation

Inventor： Min Suet Lim ,  Telesphor Kamgaing ,  Ilan Ronen ,  Kavitha Nagarajan ,  Chee Kheong Yoon ,  Chu Aun Lim ,  Eng Huat Goh ,  Jooi Wah Wong

IPC: H01L23/367 ,  H01L23/42 ,  H01L23/532

CPC classification number: H01L23/367 ,  H01L23/42 ,  H01L23/53233

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.

公开(公告)号：US20240136243A1

公开(公告)日：2024-04-25

申请号：US17972923

申请日：2022-10-24

Applicant: Intel Corporation

Inventor： Min Suet Lim ,  Telesphor Kamgaing ,  Ilan Ronen ,  Kavitha Nagarajan ,  Chee Kheong Yoon ,  Chu Aun Lim ,  Eng Huat Goh ,  Jooi Wah Wong

IPC: H01L23/367 ,  H01L23/42 ,  H01L23/532

CPC classification number: H01L23/367 ,  H01L23/42 ,  H01L23/53233

Abstract: Described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device. In this arrangement, heat can become trapped inside the device. Metal fill, such as copper, is formed within a portion of the device, e.g., over the semiconductor devices and any front side interconnect structures, to transfer heat away from the semiconductor devices and towards a heat spreader.