公开(公告)号：US20220199450A1

公开(公告)日：2022-06-23

申请号：US17132429

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Shawna M. Liff ,  Johanna M. Swan ,  Adel A. Elsherbini ,  Michael J. Baker ,  Aleksandar Aleksov ,  Feras Eid

IPC: H01L21/683 ,  H01L23/00 ,  H01L21/67

Abstract: Described herein are carrier assemblies, and related devices and methods. In some embodiments, a carrier assembly includes a carrier; a textured material including texturized microstructures coupled to the carrier; and microelectronic components mechanically coupled to the texturized microstructures. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; an electrode on the front side of the carrier; a dielectric material on the electrode; a charging contact on the back side coupled to the electrode; and microelectronic components electrostatically coupled to the front side of the carrier. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; electrodes on the front side; a dielectric material including texturized microstructures on the electrodes; charging contacts on the back side coupled to the plurality of electrodes; and microelectronic components mechanically and electrostatically coupled to the front side of the carrier.

公开(公告)号：US20220199449A1

公开(公告)日：2022-06-23

申请号：US17132407

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Michael J. Baker ,  Shawna M. Liff ,  Javier A. Falcon

IPC: H01L21/683 ,  H01L23/00

Abstract: Described herein are carrier assemblies, and related devices and methods. In some embodiments, a carrier assembly includes a carrier; a textured material including texturized microstructures coupled to the carrier; and microelectronic components mechanically coupled to the texturized microstructures. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; an electrode on the front side of the carrier; a dielectric material on the electrode; a charging contact on the back side coupled to the electrode; and microelectronic components electrostatically coupled to the front side of the carrier. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; electrodes on the front side; a dielectric material including texturized microstructures on the electrodes; charging contacts on the back side coupled to the plurality of electrodes; and microelectronic components mechanically and electrostatically coupled to the front side of the carrier.

公开(公告)号：US20220199453A1

公开(公告)日：2022-06-23

申请号：US17132372

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Michael J. Baker ,  Shawna M. Liff ,  Hsin-Wei Wang ,  Albert S. Lopez

IPC: H01L21/683 ,  H01L21/67 ,  H01L23/00

Abstract: Described herein are carrier assemblies, and related devices and methods. In some embodiments, a carrier assembly includes a carrier; a textured material including texturized microstructures coupled to the carrier; and microelectronic components mechanically coupled to the texturized microstructures. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; an electrode on the front side of the carrier; a dielectric material on the electrode; a charging contact on the back side coupled to the electrode; and microelectronic components electrostatically coupled to the front side of the carrier. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; electrodes on the front side; a dielectric material including texturized microstructures on the electrodes; charging contacts on the back side coupled to the plurality of electrodes; and microelectronic components mechanically and electrostatically coupled to the front side of the carrier.

公开(公告)号：US09728425B1

公开(公告)日：2017-08-08

申请号：US15089491

申请日：2016-04-02

Applicant: INTEL CORPORATION

Inventor： Joshua D. Heppner ,  Serge Roux ,  Michael J. Baker ,  Javier A. Falcon

IPC: H01L21/56 ,  H01L21/67 ,  B29C35/08 ,  B29C70/84 ,  B29C70/80 ,  B29C70/88 ,  H01L23/31 ,  B29K63/00 ,  B29L31/34

CPC classification number: H01L21/563 ,  B29K2063/00 ,  B29K2995/0005 ,  B29L2031/3481 ,  H01L21/67126 ,  H01L23/3157 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/743 ,  H01L2224/92125

Abstract: Space-efficient underfilling techniques for electronic assemblies are described. According to some such techniques, an underfilling method may comprise mounting an electronic element on a surface of a substrate, dispensing an underfill material upon the surface of the substrate within a dispense region for forming an underfill for the electronic element, and projecting curing rays upon at least a portion of the dispensed underfill material to inhibit an outward flow of dispensed underfill material from the dispense region, and the underfill material may comprise a non-visible light (NVL)-curable material. Other embodiments are described and claimed.

公开(公告)号：US12142510B2

公开(公告)日：2024-11-12

申请号：US17132429

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Shawna M. Liff ,  Johanna M. Swan ,  Adel A. Elsherbini ,  Michael J. Baker ,  Aleksandar Aleksov ,  Feras Eid

IPC: H01L21/683 ,  H01L21/67 ,  H01L23/00

Abstract: Described herein are carrier assemblies, and related devices and methods. In some embodiments, a carrier assembly includes a carrier; a textured material including texturized microstructures coupled to the carrier; and microelectronic components mechanically coupled to the texturized microstructures. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; an electrode on the front side of the carrier; a dielectric material on the electrode; a charging contact on the back side coupled to the electrode; and microelectronic components electrostatically coupled to the front side of the carrier. In some embodiments, a carrier assembly includes a carrier having a front side and a back side; electrodes on the front side; a dielectric material including texturized microstructures on the electrodes; charging contacts on the back side coupled to the plurality of electrodes; and microelectronic components mechanically and electrostatically coupled to the front side of the carrier.

公开(公告)号：US20210375719A1

公开(公告)日：2021-12-02

申请号：US17399882

申请日：2021-08-11

Applicant: Intel Corporation

Inventor： Feras Eid ,  Shrenik Kothari ,  Chandra M. Jha ,  Johanna M. Swan ,  Michael J. Baker ,  Shawna M. Liff ,  Thomas L. Sounart ,  Betsegaw K. Gebrehiwot ,  Shankar Devasenathipathy ,  Taylor Gaines ,  Digvijay Ashokkumar Raorane

IPC: H01L23/433 ,  H01L23/29 ,  H01L21/56 ,  H01L25/00 ,  H01L25/18 ,  H01L23/42 ,  H01L23/367 ,  H01L23/04 ,  H01L25/065 ,  H01L25/16 ,  H01L23/16

Abstract: A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound.