公开(公告)号：US20240284652A1

公开(公告)日：2024-08-22

申请号：US18644874

申请日：2024-04-24

申请人： Intel Corporation

发明人： Peng ZHENG ,  Varun MISHRA ,  Tahir GHANI

IPC分类号： H10B10/00 ,  H01L21/265 ,  H01L21/306 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66

CPC分类号： H10B10/12 ,  H01L21/26513 ,  H01L21/30604 ,  H01L21/823821 ,  H01L21/823828 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66545

摘要： Embodiments disclosed herein include transistor devices with depopulated channels. In an embodiment, the transistor device comprises a source region, a drain region, and a vertical stack of semiconductor channels between the source region and the drain region. In an embodiment, the vertical stack of semiconductor channels comprises first semiconductor channels, and a second semiconductor channel over the first semiconductor channels. In an embodiment, first concentrations of a dopant in the first semiconductor channels are less than a second concentration of the dopant in the second semiconductor channel.

公开(公告)号：US20220216221A1

公开(公告)日：2022-07-07

申请号：US17701419

申请日：2022-03-22

申请人： Intel Corporation

发明人： Peng ZHENG ,  Varun MISHRA ,  Tahir GHANI

IPC分类号： H01L27/11 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L29/36 ,  H01L29/167 ,  H01L21/306 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/265

摘要： Embodiments disclosed herein include transistor devices with depopulated channels. In an embodiment, the transistor device comprises a source region, a drain region, and a vertical stack of semiconductor channels between the source region and the drain region. In an embodiment, the vertical stack of semiconductor channels comprises first semiconductor channels, and a second semiconductor channel over the first semiconductor channels. In an embodiment, first concentrations of a dopant in the first semiconductor channels are less than a second concentration of the dopant in the second semiconductor channel.

公开(公告)号：US20240164080A1

公开(公告)日：2024-05-16

申请号：US18375858

申请日：2023-10-02

申请人： Intel Corporation

发明人： Peng ZHENG ,  Varun MISHRA ,  Harold W. KENNEL ,  Eric A. KARL ,  Tahir GHANI

IPC分类号： H10B10/00 ,  H01L29/06 ,  H01L29/10

CPC分类号： H10B10/12 ,  H01L29/0669 ,  H01L29/1037

摘要： Embodiments disclosed herein include forksheet transistor devices with depopulated channels. In an example, an integrated circuit structure includes a backbone. A first transistor device includes a first vertical stack of semiconductor channels adjacent to a first edge of the backbone. The first vertical stack of semiconductor channels includes first semiconductor channels and a second semiconductor channel over or beneath the first semiconductor channels. A concentration of a dopant in the first semiconductor channels is less than a concentration of the dopant in the second semiconductor channel. A second transistor device includes a second vertical stack of semiconductor channels adjacent to a second edge of the backbone opposite the first edge.

公开(公告)号：US20210296323A1

公开(公告)日：2021-09-23

申请号：US16827570

申请日：2020-03-23

申请人： Intel Corporation

发明人： Peng ZHENG ,  Varun MISHRA ,  Tahir GHANI

IPC分类号： H01L27/11 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L29/36 ,  H01L29/167 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/265 ,  H01L21/306

摘要： Embodiments disclosed herein include transistor devices with depopulated channels. In an embodiment, the transistor device comprises a source region, a drain region, and a vertical stack of semiconductor channels between the source region and the drain region. In an embodiment, the vertical stack of semiconductor channels comprises first semiconductor channels, and a second semiconductor channel over the first semiconductor channels. In an embodiment, first concentrations of a dopant in the first semiconductor channels are less than a second concentration of the dopant in the second semiconductor channel.