METHODS TO PATTERN TFC AND INCORPORATION IN THE ODI ARCHITECTURE AND IN ANY BUILD UP LAYER OF ORGANIC SUBSTRATE

    公开(公告)号:US20200294938A1

    公开(公告)日:2020-09-17

    申请号:US16353164

    申请日:2019-03-14

    Abstract: Embodiments include semiconductor packages. A semiconductor package includes a plurality of build-up layers and a plurality of conductive layers in the build-up layers. The conductive layers include a first conductive layer and a second conductive layer. The first conductive layer is over the second conductive layer and build-up layers, where a first via couples the first and second conductive layers. The semiconductor package also includes a thin film capacitor (TFC) in the build-up layers, where a second via couples the TFC to the first conductive layer, and the second via has a thickness less than a thickness of the first via. The first conductive layer may be first level interconnects. The build-up layers may be dielectrics. The TFC may include a first electrode, a second electrode, and a dielectric. The first electrode may be over the second electrode, and the dielectric may be between the first and second electrodes.

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