公开(公告)号：US12027417B2

公开(公告)日：2024-07-02

申请号：US16913320

申请日：2020-06-26

Applicant: Intel Corporation

Inventor： Cory Bomberger ,  Suresh Vishwanath ,  Yulia Tolstova ,  Pratik Patel ,  Szuya S. Liao ,  Anand S. Murthy

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3215 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/76834 ,  H01L21/02532 ,  H01L21/28255 ,  H01L21/3215 ,  H01L21/76831 ,  H01L29/0676 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/6656 ,  H01L29/66628

Abstract: Integrated circuit structures having source or drain structures with a high germanium concentration capping layer are described. In an example, an integrated circuit structure includes source or drain structures including an epitaxial structure embedded in a fin at a side of a gate stack. The epitaxial structure has a lower semiconductor layer and a capping semiconductor layer on the lower semiconductor layer with an abrupt interface between the capping semiconductor layer and the lower semiconductor layer. The lower semiconductor layer includes silicon, germanium and boron, the germanium having an atomic concentration of less than 40% at the abrupt interface. The capping semiconductor layer includes silicon, germanium and boron, the germanium having an atomic concentration of greater than 50% at the abrupt interface and throughout the capping semiconductor layer.

公开(公告)号：US20230207560A1

公开(公告)日：2023-06-29

申请号：US17561244

申请日：2021-12-23

Applicant: Intel Corporation

Inventor： Cory C. Bomberger ,  Nicholas Minutillo ,  Ryan Cory Haislmaier ,  Yulia Tolstova ,  Yoon Jung Chang ,  Tahir Ghani ,  Szuya S. Liao ,  Anand Murthy ,  Pratik Patel

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L29/7851 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/167 ,  H01L29/66795 ,  H01L21/823431 ,  H01L21/823418 ,  H01L21/823412

Abstract: An integrated circuit (IC) structure, an IC device, an IC device assembly, and a method of forming the same. The IC structure includes a transistor device on a substrate comprising: a gate structure including a metal, the gate structure on a channel structure; a source structure in a first trench at a first side of the gate structure; a drain structure in a second trench at a second side of the gate structure; a capping layer on individual ones of the source structure and of the drain structure. The capping layer comprising a semiconductor material of a same group as a semiconductor material of a corresponding one of the source structure or of the drain structure, wherein an isotope of a p-type dopant in the capping layer represents an atomic percentage of at least about 95% of a p-type isotope content of the capping layer; and metal contact structures coupled to respective ones of the source structure and of the drain structure.