公开(公告)号：US20200090992A1

公开(公告)日：2020-03-19

申请号：US16582923

申请日：2019-09-25

Applicant: Intel Corporation

Inventor： Yuriy V. SHUSTERMAN ,  Flavio GRIGGIO ,  Tejaswi K. INDUKURI ,  Ruth A. BRAIN

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/31 ,  H01L23/528

Abstract: Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a portion of the trench is filled with the first metal. The previously deposited first barrier layer is removed along with the first metal, thereby re-exposing the upper sidewalls of the trench. A second barrier layer is conformally deposited onto the top of the first metal and the now re-exposed trench sidewalls. A second metal fill is blanket deposited into the remaining trench. Planarization and/or etching can be carried out as needed for subsequent processing. Thus, a methodology for filling high aspect ratio vias using a dual metal process is provided. Note, however, the first and second fill metals may be the same.

公开(公告)号：US20190221478A1

公开(公告)日：2019-07-18

申请号：US16249593

申请日：2019-01-16

Applicant: Intel Corporation

Inventor： Yuriy V. SHUSTERMAN ,  Flavio GRIGGIO ,  Tejaswi K. INDUKURI ,  Ruth A. BRAIN

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/31 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76877 ,  H01L21/32115 ,  H01L21/32133 ,  H01L21/76847 ,  H01L23/3171 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a portion of the trench is filled with the first metal. The previously deposited first barrier layer is removed along with the first metal, thereby re-exposing the upper sidewalls of the trench. A second barrier layer is conformally deposited onto the top of the first metal and the now re-exposed trench sidewalls. A second metal fill is blanket deposited into the remaining trench. Planarization and/or etching can be carried out as needed for subsequent processing. Thus, a methodology for filling high aspect ratio vias using a dual metal process is provided. Note, however, the first and second fill metals may be the same.