IN-SITU FEEDBACK FOR LOCALIZED COMPENSATION
    2.
    发明公开

    公开(公告)号:US20230187284A1

    公开(公告)日:2023-06-15

    申请号:US17551266

    申请日:2021-12-15

    CPC classification number: H01L22/12 H01L21/67253 H01L22/26 H01L22/34

    Abstract: Embodiments of the present invention are directed to in-situ wafer feedback schemes and systems for providing localized process-based compensation on a semiconductor wafer. In a non-limiting embodiment of the invention, a plurality of test structures are formed on a surface of a semiconductor wafer. The semiconductor wafer is placed under a detection surface of an in-situ feedback tool comprising one or more sensors. The in-situ feedback tool measures a property of each of the plurality of test structures and determines a local condition of the semiconductor wafer for each measured property of the plurality of test structures. A localized process-based compensation is provided on the surface of the semiconductor wafer for each local condition.

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