公开(公告)号：US09704757B1

公开(公告)日：2017-07-11

申请号：US15053164

申请日：2016-02-25

Applicant: International Business Machines Corporation

Inventor： Daniele Caimi ,  Lukas Czornomaz ,  Veeresh Deshpande ,  Vladimir Djara ,  Jean Fompeyrine

IPC: H01L21/02 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L21/84 ,  H01L27/12 ,  H01L27/092

CPC classification number: H01L21/02639 ,  H01L21/02373 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/823807 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/092 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/0673 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: The invention relates to a method for fabricating a semiconductor circuit comprising providing a semiconductor substrate; fabricating a first semiconductor device comprising a first semiconductor material on the substrate and forming an insulating layer comprising a cavity structure on the first semiconductor device. The cavity structure comprises at least one growth channel and the growth channel connects a crystalline seed surface of the first semiconductor device with an opening. Further steps include growing via the opening from the seed surface a semiconductor filling structure comprising a second semiconductor material different from the first semiconductor material in the growth channel; forming a semiconductor starting structure for a second semiconductor device from the filling structure; and fabricating a second semiconductor device comprising the starting structure. The invention is notably also directed to corresponding semiconductor circuits.

公开(公告)号：US10256092B2

公开(公告)日：2019-04-09

申请号：US15627965

申请日：2017-06-20

Applicant: International Business Machines Corporation

Inventor： Daniele Caimi ,  Lukas Czornomaz ,  Veeresh Deshpande ,  Vladimir Djara ,  Jean Fompeyrine

IPC: H01L21/02 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L21/84 ,  H01L27/12 ,  H01L27/092 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/8258

Abstract: The invention relates to a method for fabricating a semiconductor circuit comprising providing a semiconductor substrate; fabricating a first semiconductor device comprising a first semiconductor material on the substrate and forming an insulating layer comprising a cavity structure on the first semiconductor device. The cavity structure comprises at least one growth channel and the growth channel connects a crystalline seed surface of the first semiconductor device with an opening. Further steps include growing via the opening from the seed surface a semiconductor filling structure comprising a second semiconductor material different from the first semiconductor material in the growth channel; forming a semiconductor starting structure for a second semiconductor device from the filling structure; and fabricating a second semiconductor device comprising the starting structure. The invention is notably also directed to corresponding semiconductor circuits.

公开(公告)号：US20170294307A1

公开(公告)日：2017-10-12

申请号：US15627965

申请日：2017-06-20

Applicant: International Business Machines Corporation

Inventor： Daniele Caimi ,  Lukas Czornomaz ,  Veeresh Deshpande ,  Vladimir Djara ,  Jean Fompeyrine

IPC: H01L21/02 ,  H01L27/12 ,  H01L21/84 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01L21/02639 ,  H01L21/02373 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/823807 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/092 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/0673 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: The invention relates to a method for fabricating a semiconductor circuit comprising providing a semiconductor substrate; fabricating a first semiconductor device comprising a first semiconductor material on the substrate and forming an insulating layer comprising a cavity structure on the first semiconductor device. The cavity structure comprises at least one growth channel and the growth channel connects a crystalline seed surface of the first semiconductor device with an opening. Further steps include growing via the opening from the seed surface a semiconductor filling structure comprising a second semiconductor material different from the first semiconductor material in the growth channel; forming a semiconductor starting structure for a second semiconductor device from the filling structure; and fabricating a second semiconductor device comprising the starting structure. The invention is notably also directed to corresponding semiconductor circuits.