公开(公告)号：US07010434B2

公开(公告)日：2006-03-07

申请号：US10819969

申请日：2004-04-08

申请人： Isao Ashida ,  Kohichi Nakayama

发明人： Isao Ashida ,  Kohichi Nakayama

IPC分类号： G01B3/00 ,  G01B5/00

CPC分类号： G03F1/20 ,  H01J2237/31794

摘要： A complementary division condition determining method and program and a complementary division method able to propose the optimum complementary division conditions for suppressing pattern displacement and mask destruction, wherein an internal stress of a mask is determined based on a displacement of a peripheral mark in a case when forming an opening in the mask and this value is used for first analysis (step ST12), pattern displacement and stress concentration occurring due to openings of split patterns are analyzed based on a first analysis model in a first analysis (step ST13), and a displacement due to external force of the membrane between the split patterns is analyzed in a second analysis (step ST14).

摘要翻译： 一种互补分割条件确定方法和程序以及能够提出用于抑制图案位移和掩模破坏的最佳互补分割条件的互补分割方法，其中，基于周边标记的位移来确定掩模的内部应力， 在掩模中形成开口，并且该值用于第一分析（步骤ST12），基于第一分析中的第一分析模型（步骤ST 13）分析由于分割图案的开口而产生的图案位移和应力集中， 并且在第二分析中分析由于分离图案之间的膜的外力引起的位移（步骤ST14）。

公开(公告)号：US20060143172A1

公开(公告)日：2006-06-29

申请号：US10543968

申请日：2004-02-04

申请人： Isao Ashida ,  Kohichi Nakayama

发明人： Isao Ashida ,  Kohichi Nakayama

IPC分类号： G06F17/30

CPC分类号： G03F1/20

摘要： Based on design data 151 and mask characteristic data 152 indicating at least the characteristics of a complementary stencil mask, generating alignment marks, designing membrane shapes, performing PUF division and boundary processing, complementarily dividing the mask, stitching, arranging complementary patterns, verifying pattern shapes, making corrections in the membrane, configuring the mask, verifying exposure, making corrections by inverting the mask, verifying the results of correction, converting the data, and thereby generating the drawing membrane data and drawing pattern data.

摘要翻译： 基于设计数据151和至少指示互补模板掩模的特征的掩模特征数据152，产生对准标记，设计膜形状，执行PUF划分和边界处理，互补地划分掩模，缝合，布置互补图案，验证图案形状 ，对膜进行校正，配置掩模，验证曝光，通过翻转掩模进行校正，验证校正结果，转换数据，从而生成绘图膜数据和绘制图案数据。

公开(公告)号：US20050124078A1

公开(公告)日：2005-06-09

申请号：US10509230

申请日：2003-03-20

申请人： Shinji Omori ,  Kaoru Koike ,  Shigeru Moriya ,  Isao Ashida

发明人： Shinji Omori ,  Kaoru Koike ,  Shigeru Moriya ,  Isao Ashida

IPC分类号： G03F1/20 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  H01L21/66 ,  G01R31/26

CPC分类号： G03F1/20 ,  H01J2237/31794

摘要： A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided. A mask pattern correction method, a mask production method, a mask produced thereby and a production method of a semiconductor device using the mask include a step of creating first position data indicating positions of a plurality of marks when supporting a first thin film having the marks in a state where a first surface directs upward, a step of creating second position data indicating mark positions when supporting the first thin film in a state where a second surface directs upward, a step of obtaining a transfer function for converting the first position data to the second position data, and a step of correcting a mask pattern as a shape of exposure beam transmission portions formed on a second thin film by using an inverse function of the transfer function.

摘要翻译： 能够通过重力防止图案的位置偏离掩模的位置偏移的掩模图案校正方法，能够以高精度形成精细图案的半导体器件的掩模制造方法，掩模和制造方法， 提供。 掩模图案校正方法，掩模制造方法，由此制备的掩模和使用掩模的半导体器件的制造方法包括：当支撑具有标记的第一薄膜时，创建指示多个标记的位置的第一位置数据的步骤 在第一面向上方的状态下，在第二面向上方的状态下支撑第一薄膜时，形成指示标记位置的第二位置数据的步骤，获得将第一位置数据变换为 第二位置数据，以及通过使用传递函数的反函数将掩模图案校正为形成在第二薄膜上的曝光光束透射部分的形状的步骤。

公开(公告)号：US06780659B2

公开(公告)日：2004-08-24

申请号：US10184903

申请日：2002-07-01

申请人： Isao Ashida

发明人： Isao Ashida

IPC分类号： H01L2166

CPC分类号： G03F1/20

摘要： A stencil mask is disclosed which can be produced by performing pattern correction in a practically applicable comparatively short period of time. When stencil mask pattern data are corrected by a stress analysis, displacement amounts are calculated for those of stencil hole patterns which have a size equal to or greater than a predetermined size. As a result, stencil mask pattern data having corrected patterns are obtained in a comparatively short period of time which can be applied industrially. By producing a stencil mask based on the patterns, a stencil mask in which a desired pattern is formed is obtained.

摘要翻译： 公开了一种可在实际适用的较短时间内进行图案校正来制造的模板掩模。 当通过应力分析校正模板掩模图案数据时，计算尺寸等于或大于预定尺寸的模版孔图案的位移量。 结果，可以在工业上应用的较短时间内获得具有校正图案的模板掩模图案数据。 通过基于图案制造模板掩模，获得其中形成所需图案的模板掩模。

公开(公告)号：US06658641B2

公开(公告)日：2003-12-02

申请号：US09981863

申请日：2001-10-17

申请人： Isao Ashida ,  Kazuhisa Ogawa

发明人： Isao Ashida ,  Kazuhisa Ogawa

IPC分类号： G06F1750

CPC分类号： G03F1/36 ,  G06F17/5081

摘要： An object of the present invention is to accurately verify errors, etc., in programs when corrections of mask data are carried out by the programs. In order to correct the mask data based on predetermined conditions, a method for mask data verification according to the present invention comprises the steps of preparing corrected mask data by using a plurality of programs each of which has a different algorithm, comparing each of corrected mask data which is prepared in the previous step and as a result of the comparison, if there are differences among the corrected mask data, extracting errors which cause problems as mask data from the differences.

摘要翻译： 本发明的目的是在通过程序执行掩模数据的修正时，在程序中准确地验证错误等。 为了基于预定条件来校正掩码数据，根据本发明的掩模数据验证方法包括以下步骤：通过使用各自具有不同算法的多个程序来准备校正的掩码数据，比较校正掩码 在前一步骤中准备的数据和作为比较的结果，如果在校正的掩码数据之间存在差异，则从差异中提取作为掩模数据的问题的提取错误。

公开(公告)号：US07109500B2

公开(公告)日：2006-09-19

申请号：US10509230

申请日：2003-03-20

申请人： Shinji Omori ,  Kaoru Koike ,  Shigeru Moriya ,  Isao Ashida

发明人： Shinji Omori ,  Kaoru Koike ,  Shigeru Moriya ,  Isao Ashida

IPC分类号： H01L21/027 ,  G03F9/00

CPC分类号： G03F1/20 ,  H01J2237/31794

摘要： A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided. A mask pattern correction method, a mask production method, a mask produced thereby and a production method of a semiconductor device using the mask include a step of creating first position data indicating positions of a plurality of marks when supporting a first thin film having the marks in a state where a first surface directs upward, a step of creating second position data indicating mark positions when supporting the first thin film in a state where a second surface directs upward, a step of obtaining a transfer function for converting the first position data to the second position data, and a step of correcting a mask pattern as a shape of exposure beam transmission portions formed on a second thin film by using an inverse function of the transfer function.

摘要翻译： 能够通过重力防止图案的位置偏离掩模的位置偏移的掩模图案校正方法，能够以高精度形成精细图案的半导体器件的掩模制造方法，掩模和制造方法， 提供。 掩模图案校正方法，掩模制造方法，由此制备的掩模和使用掩模的半导体器件的制造方法包括：当支撑具有标记的第一薄膜时，创建指示多个标记的位置的第一位置数据的步骤 在第一面向上方的状态下，在第二面向上方的状态下支撑第一薄膜时，形成指示标记位置的第二位置数据的步骤，获得将第一位置数据变换为 第二位置数据，以及通过使用传递函数的反函数将掩模图案校正为形成在第二薄膜上的曝光光束透射部分的形状的步骤。

公开(公告)号：US20050003282A1

公开(公告)日：2005-01-06

申请号：US10902092

申请日：2004-07-30

申请人： Isao Ashida

发明人： Isao Ashida

IPC分类号： G03F1/20 ,  G03F1/22 ,  G03F1/68 ,  G03F1/70 ,  G06F17/50 ,  H01L21/027 ,  H01L23/58 ,  G03C5/00 ,  G03F9/00

CPC分类号： G03F1/20

摘要： A stencil mask is disclosed which can be produced by performing pattern correction in a practically applicable comparatively short period of time. When stencil mask pattern data are corrected by a stress analysis, displacement amounts are calculated for those of stencil hole patterns which have a size equal to or greater than a predetermined size. As a result, stencil mask pattern data having corrected patterns are obtained in a comparatively short period of time which can be applied industrially. By producing a stencil mask based on the patterns, a stencil mask in which a desired pattern is formed is obtained.

摘要翻译： 公开了一种可在实际适用的较短时间内进行图案校正来制造的模板掩模。 当通过应力分析校正模板掩模图案数据时，计算尺寸等于或大于预定尺寸的模版孔图案的位移量。 结果，可以在工业上应用的较短时间内获得具有校正图案的模板掩模图案数据。 通过基于图案制造模板掩模，获得其中形成所需图案的模板掩模。

公开(公告)号：US06401235B1

公开(公告)日：2002-06-04

申请号：US09082914

申请日：1998-05-21

申请人： Isao Ashida

发明人： Isao Ashida

IPC分类号： G06F760

CPC分类号： G03F1/78 ,  G03F1/68

摘要： The invention provides a method and an apparatus for producing an exposure mask by which an exposure mask can be produced in a reduced production period and with a high degree of reliability. Data division which does not have an influence on a pattern of an exposure mask is indicated, and indication data which include a predetermined index code is retrieved from layout data to produce a file. Then, the layout data are divided in accordance with the file, and for each of the divided layout data, a corresponding one of processes is selectively performed in accordance with a condition. EB files produced by such processes are unified in accordance with the file to produce a plotting job.

摘要翻译： 本发明提供了一种用于制造曝光掩模的方法和装置，通过该方法和设备，可以在缩短的生产周期和高可靠性下产生曝光掩模。 指示对曝光掩模的图案没有影响的数据划分，并且从布局数据中检索包括预定索引码的指示数据以产生文件。 然后，根据文件划分布局数据，并且对于每个分割布局数据，根据条件选择性地执行相应的一个处理。 通过这些过程产生的EB文件根据该文件统一以产生绘图作业。