Abstract:
A distance measurement apparatus irradiates an object with a light from a light source whose luminance can be modulated or from a pulse light source, and receives the reflected and returned light to obtain a distance to the object. A photoelectric converter receives the reflected light and photoelectrically converts the received light. A first charge accumulator accumulates an electric charge transferred via a first gate driven by a first transfer pulse synchronized with an emitting timing of the light from the light source among electric charges generated by the photoelectric converter. A second charge accumulator accumulates an electric charge transferred via a second gate driven by a second transfer pulse complementary to the first transfer pulse among the electric charges generated by the photoelectric converter. A normalization circuit reads a first signal based on the accumulated electric charge of the first charge accumulator, and a second signal based on the accumulated electric charge of the second charge accumulator, and normalizes the smaller signal of the first and second signals with an added signal of the first and second signals.
Abstract:
An imaging device driver for transmitting a signal onto a signal line for controlling transistors of a pixel row. The device includes a controller and associated circuitry for reducing shoot-through current within and between row driver circuits for driving the signal line. The controller reduces shoot-through current by preventing concurrent transmission of high and low signal outputs to the signal line by respective high and low voltage sources of the same or different row driver circuits.
Abstract:
An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.
Abstract:
A method and apparatus for reducing thermally generated dark current in a CMOS imaging device is disclosed. A photodiode within the imaging device is kept zero-biased, so that the voltage is equal at both ends of the photodiode. This zero-biasing is accomplished using several different techniques, including, alternatively: a transistor operating at its sub-threshold level; a leaky diode; a short-channel MOSFET; or ramping charge injection.
Abstract:
A pixel bias current supply for supplying a stable source of bias current to pixels of an imager includes a current bypass feature for improving stability when one or more pixels of an imager saturates. The pixel bias current supply also features voltage limiters to restrict the output voltage of a pixel in order to prevent reverse video from being output when very strong light is incident upon one or more pixels.
Abstract:
An imaging device driver for transmitting a signal onto a signal line for controlling transistors of a pixel row. The device includes a controller and associated circuitry for reducing shoot-through current within and between row driver circuits for driving the signal line. The controller reduces shoot-through current by preventing concurrent transmission of high and low signal outputs to the signal line by respective high and low voltage sources of the same or different row driver circuits.
Abstract:
An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.
Abstract:
A solid state imaging element has a plurality of pixels. Each of the pixels includes a photodiode, a field effect transistor (FET) having a gate electrode connected to an output of the photodiode, a first feedback circuit connecting the gate electrode and a drain electrode of the FET and having a first switch inserted in series in a middle thereof, a second feedback circuit connecting the gate electrode and a drain electrode of the FET and having a second switch and a first capacitor inserted in series in a middle thereof, and a second capacitor having one of ends connected to a middle of the first capacitor and the second switch and having an electric potential on the other end fixed. A charge detecting device includes a capacitor, an amplifier having a negative input terminal connected to an input terminal of the capacitor, a reset switch connected in a feedback circuit connecting an output terminal of the amplifier and the negative input terminal of the amplifier, and at least one circuit connected in parallel with the feedback circuit and having a reset switch other than the reset switch connecting an output terminal of the amplifier and the negative input terminal of the amplifier and a capacitor other than the capacitor connected in series.
Abstract:
A pixel circuit, and a method for operating a pixel circuit, to provide a multiple knee response characteristic. In one embodiment a pixel circuit comprises a photoconversion device for accumulating charge during a first integration period and second integration period, an integration node connected to the photoconversion device, a first transistor having one terminal connected to said integration node and another terminal connected to a reset signal line and a feed-through pulse capacitor. The feed-through pulse capacitor has one terminal coupled to a feed-through pulse signal line, and a second terminal coupled to the integration node, said feed-through pulse signal line providing an intermediate pulse between the first and second integration periods to generate an overflow current in said the transistor.
Abstract:
A pixel circuit having an improved dynamic range is disclosed. When incoming light detected by the photodiode is strong, the accumulated (integrated) charge on a signal capacitor becomes large. To compensate, the excess signal component becomes compressed and the pixel circuit begins operating in logarithmic rather than linear mode. In this way, the circuit can achieve a higher dynamic range more closely resembling the image sensing properties of the human eye.