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    Semiconductor device and LSI defect analyzing method using the same
    1.
    发明授权
    Semiconductor device and LSI defect analyzing method using the same 失效
    半导体器件和LSI缺陷分析

    公开(公告)号：US06740979B1

    公开(公告)日：2004-05-25

    申请号：US09349927

    申请日：1999-07-08

    申请人： Itaru Tamura

    发明人： Itaru Tamura

    IPC分类号： H01L2348

    CPC分类号： H01L22/34 ,  G11C29/02 ,  G11C29/025 ,  G11C29/44 ,  G11C2029/5604 ,  H01L2924/0002 ,  H01L2924/00

    摘要： First wirings are disposed along a straight line in one row or one column of memory cell arrays. A second wiring is disposed above the first wirings and transmits a signal from one end of the second wiring to the other end thereof. Contact plugs connect the first wirings and the second wiring to each other. The first wirings are connected to a plurality of successive memory cells among all the memory cells in the row or column to which the first wirings belong. In case such an LSI is manufactured and defect analysis is made to thereby form an FBM, it is decided that the contact plugs connecting the first wirings to the second wiring are disconnected when a plurality of successive memory cells in one row or one column. Thus, a plurality of defects are expressed by the use of different categories.

    摘要翻译： 第一布线沿着一列或一列存储单元阵列沿直线布置。 第二布线设置在第一配线上方，并将信号从第二布线的一端传输到另一端。 接触插头将第一布线和第二布线彼此连接。 第一布线连接到第一布线所属的行或列中的所有存储单元中的多个连续存储单元。 在制造这样的LSI并且进行缺陷分析从而形成FBM的情况下，当一行或一列中的多个连续的存储单元被确定时，连接第一配线到第二配线的接触插头断开。 因此，通过使用不同的类别来表示多个缺陷。

    Failure-analyzing semiconductor device and semiconductor device manufacturing method using the same
    2.
    发明授权
    Failure-analyzing semiconductor device and semiconductor device manufacturing method using the same 失效
    故障分析半导体器件和使用其的半导体器件制造方法

    公开(公告)号：US06710393B2

    公开(公告)日：2004-03-23

    申请号：US09749809

    申请日：2000-12-28

    申请人： Itaru Tamura

    发明人： Itaru Tamura

    IPC分类号： H01L2976

    CPC分类号： G11C5/06

    摘要： A failure analyzing method using a failure-analyzing semiconductor device includes a first step of manufacturing a semiconductor device adapted for product in predetermined numbers during a first interval and a second step of manufacturing a failure-analyzing semiconductor device in predetermined numbers every second interval during the first interval. The first step includes a step of forming memory cells in a first semiconductor substrate. The second step includes a step of forming memory cells in a second semiconductor substrate and a step of forming first and second digitated interconnections at the same level above the second semiconductor substrate, which are connected to the memory cells and arranged so that the fingers of each of the first and second interconnections are interleaved with those of the other with a predetermined space therebetween.

    摘要翻译： 使用故障分析半导体器件的故障分析方法包括：第一步骤，在第一间隔期间制造适合于预定数量的产品的半导体器件;以及在第一间隔期间以每隔一定间隔制造故障分析半导体器件的第二步骤 第一间隔。 第一步包括在第一半导体衬底中形成存储单元的步骤。 第二步骤包括在第二半导体衬底中形成存储单元的步骤以及在与第二半导体衬底上相同的电平上形成第一和第二数字化互连的步骤，该第二和第二数字化互连连接到存储单元并且被布置成使得每个 的第一和第二互连与另一个之间的预定间隔彼此交错。

    Production process of wax pattern
    3.
    发明授权
    Production process of wax pattern 失效
    蜡图案的生产过程

    公开(公告)号：US5921309A

    公开(公告)日：1999-07-13

    申请号：US946103

    申请日：1997-10-02

    申请人： Masakatsu Nishida ,  Koji Sassa ,  Tsuyoki Kokubun ,  Akio Ishida ,  Itaru Tamura

    发明人： Masakatsu Nishida ,  Koji Sassa ,  Tsuyoki Kokubun ,  Akio Ishida ,  Itaru Tamura

    IPC分类号： B22C7/02 ,  B22C9/04

    CPC分类号： B22C7/02

    摘要： A production process of a wax pattern having a core, which is used for casting a product having a complicated hollow portion, comprising the steps of: producing two or more wax shells each having a contour of an external surface of a desired casting; and combining the wax shells with a core to obtain a wax pattern having a hollow portion between the wax shells and the core. Using the method, the occurrence of breakage of the core during dewaxing or production of the pwax pattern is extremely reduced, and a lowering in yield rate due to the breakage of the core is remarkably ameliorated.

    摘要翻译： 具有芯的蜡图案的制造方法，其用于铸造具有复杂的中空部的产品，包括以下步骤：制备两个或更多个具有所需铸件的外表面轮廓的蜡壳; 并且将蜡壳与芯组合以获得在蜡壳和芯之间具有中空部分的蜡图案。 使用该方法，在脱蜡或生产pwax图案期间芯的断裂的发生极大地降低，并且由于芯的断裂而导致的成品率的降低得到显着改善。

    Heat-resistant nickel-based alloy excellent in weldability
    4.
    发明授权
    Heat-resistant nickel-based alloy excellent in weldability 失效
    耐热镍基合金，焊接性优良

    公开(公告)号：US5882586A

    公开(公告)日：1999-03-16

    申请号：US899587

    申请日：1997-07-24

    申请人： Itaru Tamura ,  Kazunori Tokoro ,  Takashi Kawabata ,  Tsuyoki Kokubun ,  Toshio Mochizuki ,  Shuichi Sakashita ,  Hisataka Kawai ,  Ikuo Okada ,  Ichiro Tsuji ,  Kouji Takahashi ,  Taiji Torigoe

    发明人： Itaru Tamura ,  Kazunori Tokoro ,  Takashi Kawabata ,  Tsuyoki Kokubun ,  Toshio Mochizuki ,  Shuichi Sakashita ,  Hisataka Kawai ,  Ikuo Okada ,  Ichiro Tsuji ,  Kouji Takahashi ,  Taiji Torigoe

    IPC分类号： C22C19/05

    CPC分类号： C22C19/056

    摘要： A heat-resistant nickel-based alloy having excellent welding properties, said nickel-based alloy consisting essentially of, in terms of wt. %, 0.05 to 0.25% of C, 18 to 25% of Cr, 15 to 25% of Co, at least one selected from the group consisting of up to 3.5% of Mo and 5 to 10% of W, with W+1/2Mo being 5 to 10%, 1.0 to 5.0% of Ti, 1.0 to 4.0% of Al, 0.5 to 4.5% of Ta, 0.2 to 3.0% of Nb, 0.005 to 0.10% of Zr, 0.001 to 0.01% of B and the balance being Ni and unavoidable impurities, wherein the (Al+Ti) content and the (W+1/2Mo) content are within the range surrounded by the lines connecting points A (Al+Ti: 5%, W+1/2Mo: 10%), B (Al+Ti: 5%, W+1/2Mo: 5%), C (Al+Ti: 7%, W+1/2Mo: 5%), and D (Al+Ti: 7%, W+1/2Mo: 10%) excluding the line A-B in FIG. 1. Another alloy has substantially the same composition as described above except that the Cr content is 10 to 20% and the (Al+Ti) content and the (W+1/2Mo) content are within the range surrounded by the lines connecting points A, B, E (Al+Ti: 4%, W+1/2Mo: 5%), F (Al+Ti: 4%, W+1/2Mo: 0.5%), G (Al+Ti: 7%, W+1/2Mo: 0.5%) and D, excluding the line A-B-E, in FIG. 1.

    摘要翻译： 一种具有优异焊接性能的耐热镍基合金，所述镍基合金基本上以重量计。 ，0.05〜0.25％的C，18〜25％的Cr，15〜25％的Co，至少1种选自高达3.5％的Mo和5〜10％的W，W + E，fra 1/2 + EE Mo为5〜10％，Ti为1.0〜5.0％，Al为1.0〜4.0％，Ta为0.5〜4.5％，Nb为0.2〜3.0％，Zr为0.005〜0.10％ 0.001〜0.01％的B，余量为Ni和不可避免的杂质，其中（Al + Ti）含量和（W ++ E，fra 1/2 + EE Mo）含量在连接点 A（Al + Ti：5％，W ++ E，fra 1/2 + EE Mo：10％），B（Al + Ti：5％，W ++ E，fra 1/2 + EE Mo： ），C（Al + Ti：7％，W ++ E，fra 1/2 + EE Mo：5％）和D（Al + Ti：7％，W ++ E， ：10％），不包括图1中的线AB。 另一种合金具有与上述基本相同的组成，不同之处在于Cr含量为10〜20％，（Al + Ti）含量和（W ++ E，fra 1/2 + EE Mo）含量在 连接点A，B，E（Al + Ti：4％，W ++ E，fra 1/2 + EE Mo：5％），F（Al + Ti：4％，W ++ E ，1/2 + EE Mo：0.5％），G（Al + Ti：7％，W ++ E，fra 1/2 + EE Mo：0.5％）和D，不包括线ABE。 1。

    Process for the heat treatment of a Ni-base heat-resisting alloy
    8.
    发明授权
    Process for the heat treatment of a Ni-base heat-resisting alloy 有权
    镍基耐热合金热处理工艺

    公开(公告)号：US06132535A

    公开(公告)日：2000-10-17

    申请号：US428785

    申请日：1999-10-28

    申请人： Ikuo Okada ,  Taiji Torigoe ,  Hisataka Kawai ,  Koji Takahashi ,  Itaru Tamura ,  Shyuichi Sakashita

    发明人： Ikuo Okada ,  Taiji Torigoe ,  Hisataka Kawai ,  Koji Takahashi ,  Itaru Tamura ,  Shyuichi Sakashita

    IPC分类号： C22C19/05 ,  C22F1/10

    CPC分类号： C22C19/058 ,  C22C19/055 ,  C22C19/056 ,  C22F1/10

    摘要： Provided is a process for improving alloy properties which can improve the high-temperature ductility of a Ni-base heat-resisting alloy while maintaining its excellent high-temperature strength and weldability. Specifically, it relates to a process for the heat treatment of a Ni-base heat-resisting alloy having a specific composition which comprises the steps of subjecting the alloy to a first-stage solution treatment by keeping it at a specific temperature for a specific period of time; cooling the alloy to a second-stage solution treatment temperature at a specific cooling rate; subjecting the alloy to a second-stage solution treatment by keeping it at a specific temperature for a specific period of time; cooling the alloy rapidly to room temperature at a specific cooling rate; subjecting the alloy to a stabilizing treatment by keeping it at a specific temperature for a specific period of time; cooling the alloy rapidly to room temperature at a specific cooling rate; and subjecting the alloy to an aging treatment by keeping it at a specific temperature for a specific period of time.

    摘要翻译： 提供了一种提高合金性能的方法，其可以在保持其优异的高温强度和可焊性的同时提高Ni基耐热合金的高温延展性。 具体而言，涉及具有特定组成的Ni基耐热合金的热处理方法，该方法包括以下步骤：使合金进行第一阶段固溶处理，将其保持在特定温度下一段特定的时间 的时间 以合适的冷却速度将合金冷却至第二阶段固溶处理温度; 通过将合金保持在特定温度一段时间来对合金进行第二阶段溶液处理; 以合适的冷却速度将合金快速冷却至室温; 通过将合金保持在特定温度一段特定的时间来对合金进行稳定处理; 以合适的冷却速度将合金快速冷却至室温; 并通过将其保持在特定温度一段时间来对合金进行时效处理。

    Motor eccentricity measuring apparatus
    9.
    发明授权
    Motor eccentricity measuring apparatus 失效
    电机偏心测量仪

    公开(公告)号：US5365458A

    公开(公告)日：1994-11-15

    申请号：US856258

    申请日：1992-03-25

    申请人： Itaru Tamura ,  Akira Toyama

    发明人： Itaru Tamura ,  Akira Toyama

    IPC分类号： G01B7/312 ,  G01B21/20

    CPC分类号： G01B7/312

    摘要： A motor eccentricity measuring apparatus is provided comprising a detecting device for detecting a deflection of the rotating shaft of a motor, a first, a second, and a third hold device for holding detected values supplied from the detecting device, and an amplifier device for amplifying a difference between two outputs of the first and the second hold device. In operation, RRO is calculated, during a first measuring period, from the detected values of the first and third hold device and NRRO is calculated, during a second measuring period, from the detected values of the first and second hold device and simultaneously, amplified with the amplifier device.

    摘要翻译： 一种电动机偏心测量装置，包括用于检测电动机的旋转轴的偏转的检测装置，用于保持从检测装置提供的检测值的第一，第二和第三保持装置，以及放大装置 第一和第二保持装置的两个输出之间的差异。 在操作中，在第一测量周期期间，从第一和第三保持装置的检测值和在第二测量周期期间根据第一和第二保持装置的检测值计算NRRO，并且同时放大RRO， 与放大器设备。