公开(公告)号：US20170369513A1

公开(公告)日：2017-12-28

申请号：US15699714

申请日：2017-09-08

申请人： JCU CORPORATION

发明人： Daisuke Sadohara ,  Kenichi Nishikawa ,  Yasutake Nemichi ,  Hisayuki Toda ,  Hiroki Yasuda ,  Shinsuke Takagi ,  Christopher Ernest John Cordonier

IPC分类号： C07F7/04 ,  C08G77/02 ,  C09D183/00

摘要： An object of the present invention is to provide a silicon oligomer having a novel function that has not been achieved by a conventional condensation product of water and a tetraalkoxysilane. Provided are a silicon oligomer represented by the following formula (I) and a production method therefor: wherein R1 to R10 each independently is an alkyl group or a hydroxyalkyl group, each having 1 to 4 carbon atoms; X1 to X3 each independently is a group represented by the following formula (II); n is 0 or 1; and m is an integer of 1 to 3 when n is 0, and m is 1 when n is 1: wherein A is an alkylene group having 2 to 4 carbon atoms which may be branched, and 1 is an integer of 1 to 3.

公开(公告)号：US10533022B2

公开(公告)日：2020-01-14

申请号：US15699714

申请日：2017-09-08

申请人： JCU CORPORATION

发明人： Daisuke Sadohara ,  Kenichi Nishikawa ,  Yasutake Nemichi ,  Hisayuki Toda ,  Hiroki Yasuda ,  Shinsuke Takagi ,  Christopher Ernest John Cordonier

IPC分类号： C07F7/04 ,  C08G77/02 ,  C09D183/00

摘要： An object of the present invention is to provide a silicon oligomer having a novel function that has not been achieved by a conventional condensation product of water and a tetraalkoxysilane. Provided are a silicon oligomer represented by the following formula (I) and a production method therefor: wherein R1 to R10 each independently is an alkyl group or a hydroxyalkyl group, each having 1 to 4 carbon atoms; X1 to X3 each independently is a group represented by the following formula (II); n is 0 or 1; and m is an integer of 1 to 3 when n is 0, and m is 1 when n is 1: wherein A is an alkylene group having 2 to 4 carbon atoms which may be branched, and 1 is an integer of 1 to 3.

公开(公告)号：US10966327B2

公开(公告)日：2021-03-30

申请号：US16072091

申请日：2016-01-29

申请人： JCU CORPORATION

发明人： Daisuke Sadohara ,  Kenichi Nishikawa ,  Keita Suzuki ,  Kouta Ibe ,  Katsumi Shimoda

IPC分类号： H05K3/46 ,  H01L21/288 ,  C23C18/18 ,  C23C18/20 ,  C25D5/02 ,  C23C18/16 ,  C23C18/30 ,  B05D5/12 ,  B05D3/06 ,  H05K3/18

摘要： A new method capable of forming a circuit by performing metal plating on a desired portion on a substrate through a small number of steps regardless of the kind of the substrate. A method for forming a circuit on a substrate characterized in that when forming a circuit by plating on a substrate, the method includes steps of applying a coating film containing a silicone oligomer and a catalyst metal onto the substrate, and thereafter, performing an activation treatment of the catalyst metal in the coating film to make the catalyst metal exhibit autocatalytic properties, and then, performing electroless plating.