公开(公告)号：US20190206964A1

公开(公告)日：2019-07-04

申请号：US16296217

申请日：2019-03-08

Applicant: JOLED Inc.

Inventor： Atsuhito MURAI ,  Eiichi SATO ,  Masanori MIURA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/3276 ,  H01L27/3297 ,  H01L51/5253 ,  H01L2227/323

Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.

公开(公告)号：US20170271376A1

公开(公告)日：2017-09-21

申请号：US15459634

申请日：2017-03-15

Applicant: JOLED Inc. ,  Japan Display Inc.

Inventor： Atsuhito MURAI ,  Eiichi SATO ,  Masanori MIURA

IPC: H01L27/12 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/786 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/5253 ,  H01L51/5256

Abstract: According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.

公开(公告)号：US20220005918A1

公开(公告)日：2022-01-06

申请号：US17480145

申请日：2021-09-21

Applicant: JOLED Inc.

Inventor： Atsuhito MURAI ,  Eiichi SATO ,  Masanori MIURA

IPC: H01L27/32 ,  H01L51/52

Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.

公开(公告)号：US20190081083A1

公开(公告)日：2019-03-14

申请号：US16186590

申请日：2018-11-12

Applicant: JOLED Inc.

Inventor： Atsuhito MURAI ,  Eiichi SATO ,  Masanori MIURA

IPC: H01L27/12 ,  H01L51/52 ,  H01L29/786 ,  H01L27/32 ,  H01L29/417 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/786 ,  H01L29/78666 ,  H01L29/78675 ,  H01L29/7869 ,  H01L51/5253 ,  H01L51/5256

Abstract: According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.

公开(公告)号：US20170271423A1

公开(公告)日：2017-09-21

申请号：US15459257

申请日：2017-03-15

Applicant: JOLED Inc. ,  Japan Display Inc.

Inventor： Atsuhito MURAI ,  Eiichi SATO ,  Masanori MIURA

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/3276 ,  H01L27/3297 ,  H01L51/5253 ,  H01L2227/323

Abstract: According to one embodiment, a display device includes a pixel area including pixels each including at least one thin film transistor includes a semiconductor layer and a gate electrode, a first terminal area including a first wiring line disposed thereon connected to the at least one thin film transistor, a first protective film provided on the semiconductor layer, the gate electrode and the first wiring line, a first insulating film provided on the first protective film, a second protective film provided on the first insulating film, a second insulating film provided on the second protective film, a first opening formed in the first terminal area, and partially exposing the first wiring line, and a second opening formed to correspond to the first opening.

公开(公告)号：US20190006617A1

公开(公告)日：2019-01-03

申请号：US16018077

申请日：2018-06-26

Applicant: JOLED INC.

Inventor： Masanori MIURA ,  Atsuhito MURAI

IPC: H01L51/52 ,  H01L51/50 ,  H01L51/56 ,  H01L27/32 ,  G09G3/3266 ,  G09G3/3233 ,  G09G3/3258

Abstract: A display device includes a display region, an organic insulating layer, a display element, and a moisture-ingress barrier. The organic insulating layer has a groove outside the display region. The organic insulating layer extends over the display region and a region outside the groove. The display element is disposed in the display region and includes, in order, a first electrode, an organic layer, and a second electrode. The organic layer includes one or more moisture-reacting layers. The moisture-ingress barrier is disposed in the groove of the organic insulating layer, includes a material identical to the material of the one or more moisture-reacting layers, and has a thickness greater than the thickness of the one or more moisture-reacting layers.