公开(公告)号：US10230003B2

公开(公告)日：2019-03-12

申请号：US14915704

申请日：2014-06-25

Applicant: JOLED INC.

Inventor： Eiji Takeda ,  Toru Saito

IPC: G01R27/04 ,  H01L29/786 ,  H01L21/66 ,  G01R31/26 ,  G01R31/265 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

Abstract: A method of evaluating a thin-film transistor (TFT) which is disposed on a substrate, and includes at least: an oxide semiconductor layer which functions as a channel layer; and a channel protection layer disposed above the oxide semiconductor layer. The method includes: measuring a change in a reflectance of a microwave emitted to the oxide semiconductor layer while the oxide semiconductor layer is irradiated with excitation light by pulse irradiation; calculating a decay period which is a period of time taken for the reflectance to decay to 1/e or 1/e2, based on the change in the reflectance obtained in the measuring; and performing determination related to a threshold voltage of the oxide semiconductor layer, based on the decay period calculated in the calculating.

公开(公告)号：US10026795B2

公开(公告)日：2018-07-17

申请号：US15312183

申请日：2015-05-20

Applicant: JOLED INC.

Inventor： Yuuki Abe ,  Kazuhiro Yokota ,  Yasuharu Shinokawa ,  Kou Sugano ,  Eiji Takeda

IPC: H01L29/08 ,  H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L27/12 ,  H01L29/786

Abstract: An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.

公开(公告)号：US09691906B2

公开(公告)日：2017-06-27

申请号：US15028966

申请日：2014-07-01

Applicant: JOLED INC.

Inventor： Eiji Takeda ,  Takahiro Kawashima

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/32

CPC classification number: H01L29/78696 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78693

Abstract: A method for producing a thin film transistor including an oxide semiconductor layer includes: depositing an oxide semiconductor film above a substrate by a sputtering method; and forming the oxide semiconductor layer into a predetermined shape by processing the oxide semiconductor film, wherein in the depositing of an oxide semiconductor film, a first oxide semiconductor film is deposited by using a first power density, and a second oxide semiconductor film is then deposited on the first oxide semiconductor film by using a second power density different from the first power density.