公开(公告)号：US20180158954A1

公开(公告)日：2018-06-07

申请号：US15872879

申请日：2018-01-16

申请人： JOLED INC.

发明人： Mitsutaka MATSUMOTO

IPC分类号： H01L29/786 ,  H01L21/44 ,  H01L21/4757 ,  H01L29/49 ,  H01L21/385 ,  H01L29/66 ,  H01L29/26

CPC分类号： H01L29/7869 ,  H01L21/02321 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/3115 ,  H01L21/385 ,  H01L21/44 ,  H01L21/465 ,  H01L21/47576 ,  H01L29/26 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

摘要： A thin film transistor includes a gate electrode. The thin film transistor further includes an oxide semiconductor layer which includes at least indium and is usable as a channel layer, wherein a region of the oxide semiconductor layer closest to the gate electrode includes fluorine. The thin film transistor further includes a gate insulating layer between the gate electrode and the oxide semiconductor layer. The thin film transistor further includes a fluorine-including layer which includes fluorine and is between the gate electrode and the gate insulating layer.

公开(公告)号：US20170141231A1

公开(公告)日：2017-05-18

申请号：US15321975

申请日：2015-06-24

申请人： JOLED INC.

发明人： Mitsutaka MATSUMOTO ,  Arinobu KANEGAE

IPC分类号： H01L29/786 ,  H01L21/385 ,  H01L21/383 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/383 ,  H01L21/385 ,  H01L21/471 ,  H01L21/473 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696 ,  H01L51/50

摘要： A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.

公开(公告)号：US20170162713A1

公开(公告)日：2017-06-08

申请号：US15320297

申请日：2015-06-17

申请人： JOLED INC.

发明人： Mitsutaka MATSUMOTO

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： A thin film transistor includes: a gate electrode; a source electrode and a drain electrode; an oxide semiconductor layer used as a channel layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer, wherein metallic elements included in the oxide semiconductor layer include at least indium (In), and fluorine (F) is included in a region which is an internal region in the oxide semiconductor layer and is close to the gate insulating layer.

公开(公告)号：US20170148924A1

公开(公告)日：2017-05-25

申请号：US15320319

申请日：2015-06-17

申请人： JOLED INC.

发明人： Mitsutaka MATSUMOTO

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L29/24

CPC分类号： H01L29/0607 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L33/508 ,  H01L51/50

摘要： A thin film transistor includes: a gate electrode; a gate insulating layer above the gate electrode; an oxide semiconductor layer disposed above the gate insulating layer; and a source electrode and a drain electrode disposed above the oxide semiconductor layer and electrically connected to the oxide semiconductor layer, wherein metallic elements included in the oxide semiconductor layer include at least indium (In), fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the gate insulating layer, and a fluorine concentration of the region close to the gate insulating layer in the oxide semiconductor layer is higher than a fluorine of a contact region for the source electrode or the drain electrode in the oxide semiconductor layer.