公开(公告)号：US20230340266A1

公开(公告)日：2023-10-26

申请号：US18198954

申请日：2023-05-18

Applicant: JSR CORPORATION

Inventor： Tomoaki SEKO ,  Yusuke ANNO ,  Akitaka NII ,  Ryuichi NEMOTO ,  Souta NISHIMURA

IPC: G03F7/32 ,  C08L83/04 ,  G03F7/11 ,  G03F7/20

CPC classification number: C08L83/04 ,  G03F7/11 ,  G03F7/322 ,  G03F7/70025 ,  G03F7/70033 ,  C08L2203/20

Abstract: A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less.

公开(公告)号：US20250044701A1

公开(公告)日：2025-02-06

申请号：US18919818

申请日：2024-10-18

Applicant: JSR CORPORATION

Inventor： Kazunori SAKAI ,  Tatsuya KASAI ,  Ayaka SUZUKI ,  Akitaka NII

IPC: G03F7/00 ,  C08K5/5419 ,  C09D133/06 ,  G03F7/039 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027

Abstract: A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.