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公开(公告)号:US20240004297A1
公开(公告)日:2024-01-04
申请号:US18218193
申请日:2023-07-05
Applicant: JSR CORPORATION
Inventor: Tatsuya KASAI , Ayaka Furusawa , Kazunori Sakai , Ryuichi Serizawa
IPC: G03F7/11 , C08G77/04 , H01L21/027
CPC classification number: G03F7/11 , C08G77/04 , H01L21/0274 , C08G77/80
Abstract: A composition includes: a solvent; and a compound including: at least one structural unit selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); and a structural unit represented by formula (2-1). X is a monovalent organic group other than an alkoxy group, the monovalent organic group having 1 to 20 carbon atoms and having at least one fluorine atom; Y is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; R0 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is a monovalent organic group having 1 to 20 carbon atoms and having no fluorine atom, a hydroxy group, a hydrogen atom, or a halogen atom; and R2 is a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms.
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公开(公告)号:US20220146940A1
公开(公告)日:2022-05-12
申请号:US17584456
申请日:2022-01-26
Applicant: JSR CORPORATION
Inventor: Tatsuya KASAI , Tomohiro Matsuki , Yusuke Anno , Tomoaki Seko , Tatsuya Sakai
IPC: G03F7/11 , C08G77/50 , C08G77/26 , C09D183/08 , H01L21/027
Abstract: A composition includes a solvent and at least one compound selected from the group consisting of: a first compound which comprises a first structural unit comprising a Si—H bond, and a second structural unit represented by formula (2), and a second compound which comprises the second structural unit represented by the formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms which comprises a nitrogen atom; e is an integer of 1 to 3; R4 represents a monovalent organic group having 1 to 20 carbon atoms, or a hydroxy group, a hydrogen atom, or a halogen atom; and f is an integer of 0 to 2. A sum of e and f is no greater than 3. In the case where the at least one compound is the second compound, f is 1 or 2, and at least one R4 represents a hydrogen atom.
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公开(公告)号:US20250044701A1
公开(公告)日:2025-02-06
申请号:US18919818
申请日:2024-10-18
Applicant: JSR CORPORATION
Inventor: Kazunori SAKAI , Tatsuya KASAI , Ayaka SUZUKI , Akitaka NII
IPC: G03F7/00 , C08K5/5419 , C09D133/06 , G03F7/039 , G03F7/075 , G03F7/16 , H01L21/027
Abstract: A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.
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公开(公告)号:US20190101672A1
公开(公告)日:2019-04-04
申请号:US16078238
申请日:2017-03-15
Applicant: JSR CORPORATION
Inventor: Tatsuya KASAI , Katsuya NAGAYA , Toshihiro OTSUKI
IPC: G02B5/20 , H01L27/146 , G02B5/00
Abstract: The object of the present invention is to provide an optical filter which has not only a high visible light transmittance, but also high light cut characteristics in the near-infrared wavelength region, and which is excellent in heat resistance. The optical filter of the present invention comprises a base material comprising a compound (S) having an absorption maximum in the region of 600 to 1150 nm and an antioxidant (P) having at least one phosphorus atom in a molecule, and a dielectric multilayer film formed on at least one surface of the base material.
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