公开(公告)号：US11053457B2

公开(公告)日：2021-07-06

申请号：US16595899

申请日：2019-10-08

Applicant: JSR CORPORATION

Inventor： Shun Aoki ,  Kan-go Chung ,  Tomohiro Matsuki ,  Tatsuya Sakai ,  Kenji Mochida ,  Yuushi Matsumura

IPC: C11D3/37 ,  C11D3/20 ,  C11D1/00 ,  H01L21/02

Abstract: A composition for cleaning a semiconductor substrate contains: a novolak resin; an organic acid not being a polymeric compound; and a solvent. A solid content concentration of the composition is no greater than 20% by mass. The organic acid is preferably a carboxylic acid. The carboxylic acid is preferably a monocarboxylic acid, polycarboxylic acid or a combination thereof. The molecular weight of the organic acid is preferably from 50 to 500. The content of the organic acid with respect to 10 parts by mass of the novolak resin is preferably from 0.001 parts by mass to 10 parts by mass. The solvent includes preferably an ether solvent, an alcohol solvent, or a combination thereof. The proportion of the ether solvent, the alcohol solvent, or the combination thereof in the solvent is preferably no less than 50% by mass.

公开(公告)号：US10023827B2

公开(公告)日：2018-07-17

申请号：US15590326

申请日：2017-05-09

Applicant: JSR CORPORATION

Inventor： Kenji Mochida ,  Motoyuki Shima

IPC: C11D11/00 ,  C11D3/37 ,  C11D7/50 ,  B08B7/00 ,  C08F120/18 ,  C08F120/24 ,  C08F120/28 ,  C08F132/08 ,  C08K5/092 ,  C11D3/20 ,  C11D3/24 ,  C11D3/43 ,  H01L21/02

Abstract: A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.

公开(公告)号：US09818598B2

公开(公告)日：2017-11-14

申请号：US14809373

申请日：2015-07-27

Applicant: TOKYO ELECTRON LIMITED ,  JSR CORPORATION

Inventor： Meitoku Aibara ,  Yuki Yoshida ,  Hisashi Kawano ,  Masami Yamashita ,  Itaru Kanno ,  Kenji Mochida ,  Motoyuki Shima

IPC: B08B7/00 ,  H01L21/02 ,  H01L21/67 ,  B08B3/08

CPC classification number: H01L21/02057 ,  B08B3/08 ,  H01L21/02041 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6715

Abstract: An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.