Substrate cleaning method, substrate cleaning system, and storage medium

    公开(公告)号:US11600499B2

    公开(公告)日:2023-03-07

    申请号:US17255029

    申请日:2019-06-13

    发明人: Meitoku Aibara

    IPC分类号: H01L21/67 H01L21/02

    摘要: A substrate cleaning method according to an aspect of the present disclosure includes: supplying a film-forming treatment liquid containing a volatile component to a substrate to form a film on the substrate; supplying a peeling treatment liquid, which peels off a treatment film from the substrate, to the treatment film formed by solidifying or curing the film-forming treatment liquid on the substrate due to volatilization of the volatile component; and supplying a hydrophobic liquid, which hydrophobizes the substrate, to the substrate to which the peeling treatment liquid has been supplied.

    Substrate processing apparatus
    3.
    发明授权

    公开(公告)号:US09768039B2

    公开(公告)日:2017-09-19

    申请号:US14084839

    申请日:2013-11-20

    IPC分类号: H01L21/67 H01L21/687

    CPC分类号: H01L21/67051 H01L21/68735

    摘要: A substrate processing apparatus includes a rotary cup that is provided at a substrate holding unit to surround a substrate held thereon and to be rotated along with the substrate holding unit, and configured to guide a processing liquid dispersed from the substrate; and an outer cup that is provided around the rotary cup with a gap therebetween and configured to collect the guided processing liquid by the rotary cup. Further, a height of an upper end of the rotary cup is higher than that of the outer cup. Furthermore, an outward protrusion protruded outwards in a radial direction thereof and extended along a circumference thereof is provided at an upper end portion of an outer surface of the rotary cup, and the outward protrusion blocks mist of the processing liquid dispersed from the gap between the rotary cup and the outer cup toward a space above the substrate.

    SUBSTRATE PROCESSING APPARATUS AND NOZZLE CLEANING METHOD
    4.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND NOZZLE CLEANING METHOD 有权
    基板加工设备和喷嘴清洁方法

    公开(公告)号:US20140352730A1

    公开(公告)日:2014-12-04

    申请号:US14291494

    申请日:2014-05-30

    IPC分类号: B08B3/02 B05B15/02

    摘要: A substrate processing apparatus according to the present disclosure includes first and second nozzles that eject a processing liquid to a substrate; a moving mechanism that moves the first and second nozzles; and a nozzle cleaning device that cleans at least the second nozzle. The nozzle cleaning device includes a cleaning bath and an overflow bath. The cleaning bath includes a liquid storage portion that stores a cleaning liquid for cleaning the second nozzle, and an overflow portion that discharges the cleaning liquid exceeding a predetermined level from the liquid storage portion. The overflow bath is disposed adjacent to the cleaning bath and receives the cleaning liquid discharged from the overflow portion and discharge the received cleaning liquid to the outside.

    摘要翻译: 根据本公开的基板处理装置包括将处理液喷射到基板的第一和第二喷嘴; 移动机构,其移动所述第一和第二喷嘴; 以及清洁至少第二喷嘴的喷嘴清洁装置。 喷嘴清洁装置包括清洗槽和溢流槽。 清洗槽包括储存用于清洗第二喷嘴的清洗液的液体储存部分和从液体储存部分排出超过预定水平的清洗液体的溢流部分。 溢流槽设置在清洗槽附近,并接收从溢流部排出的清洗液,并将接收到的清洗液排出到外部。

    SUBSTRATE CLEANING METHOD
    5.
    发明申请

    公开(公告)号:US20200303220A1

    公开(公告)日:2020-09-24

    申请号:US16892396

    申请日:2020-06-04

    摘要: A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.

    Substrate cleaning method, substrate cleaning system and memory medium

    公开(公告)号:US10734255B2

    公开(公告)日:2020-08-04

    申请号:US15599067

    申请日:2017-05-18

    摘要: A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

    SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD

    公开(公告)号:US20180330971A1

    公开(公告)日:2018-11-15

    申请号:US15972492

    申请日:2018-05-07

    摘要: A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.

    Substrate cleaning method
    9.
    发明授权

    公开(公告)号:US11551941B2

    公开(公告)日:2023-01-10

    申请号:US16892396

    申请日:2020-06-04

    摘要: A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.