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    Substrate cleaning method, substrate cleaning system and memory medium
    2.
    发明授权
    Substrate cleaning method, substrate cleaning system and memory medium 有权

    公开(公告)号：US10734255B2

    公开(公告)日：2020-08-04

    申请号：US15599067

    申请日：2017-05-18

    申请人： TOKYO ELECTRON LIMITED

    发明人： Kenji Sekiguchi ,  Itaru Kanno ,  Meitoku Aibara ,  Kouzou Tachibana

    IPC分类号： H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  B08B3/04

    摘要： A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

    Substrate cleaning method, substrate cleaning system, and memory medium
    4.
    发明授权
    Substrate cleaning method, substrate cleaning system, and memory medium 有权

    公开(公告)号：US10811283B2

    公开(公告)日：2020-10-20

    申请号：US15904539

    申请日：2018-02-26

    申请人： TOKYO ELECTRON LIMITED

    发明人： Miyako Kaneko ,  Keiji Tanouchi ,  Takehiko Orii ,  Itaru Kanno ,  Meitoku Aibara ,  Satoru Tanaka

    IPC分类号： H01L21/02 ,  H01L21/67

    摘要： A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

    Substrate processing apparatus and substrate processing method
    8.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号：US09378940B2

    公开(公告)日：2016-06-28

    申请号：US13916826

    申请日：2013-06-13

    申请人： Tokyo Electron Limited

    发明人： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

    IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/311

    CPC分类号： H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

    摘要： The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

    摘要翻译： 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。