公开(公告)号：US20140363766A9

公开(公告)日：2014-12-11

申请号：US13940119

申请日：2013-07-11

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Masafumi HORI ,  Koji ITO ,  Hiromu MIYATA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0041 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38

Abstract: A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the is like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Abstract translation: 抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物形成抗蚀剂涂膜。 使用含有不少于80质量％的有机溶剂的显影剂溶液将抗蚀剂涂膜曝光和显影。 辐射敏感性树脂组合物包括含有酸不稳定基团的聚合物和辐射敏感性酸产生剂的聚合物组分。 聚合物组分包括在相同聚合物或不同聚合物中的具有第一烃基的第一结构单元和具有第二烃基的第二结构单元。 第一个烃基是未取代或取代的支链基团，或类似的。 第二个烃基具有金刚烷骨架。 第二烃基与第一烃基的摩尔比小于1.聚合物组分中具有羟基的结构单元的比例小于5摩尔％。

公开(公告)号：US20140255854A1

公开(公告)日：2014-09-11

申请号：US14281738

申请日：2014-05-19

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Hiromu MIYATA ,  Taiichi FURUKAWA ,  Koji ITO

IPC: G03F7/038

CPC classification number: G03F7/038 ,  C08F220/18 ,  C08F220/28 ,  C08F224/00 ,  C08F2220/283 ,  C08F2220/382 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

Abstract: A pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The resist film is exposed. The exposed resist film is developed using a developer having an organic solvent content of 80 mass % or more. The photoresist composition includes a first polymer, a second polymer, and an acid generator. The first polymer is a base polymer and includes a first structural unit that includes an acid-labile group. The second polymer includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the first polymer. The second structural unit is represented by a formula (1) or a formula (2).

Abstract translation: 图案形成方法包括使用光致抗蚀剂组合物在基板上提供抗蚀剂膜。 抗蚀剂膜被曝光。 使用有机溶剂含量为80质量％以上的显影剂使曝光的抗蚀剂膜显影。 光致抗蚀剂组合物包括第一聚合物，第二聚合物和酸产生剂。 第一聚合物是基础聚合物，并且包括包含酸不稳定基团的第一结构单元。 第二聚合物包括第二结构单元，其包含酸不稳定基团，并且具有比第一聚合物的氟原子含量高的氟原子含量。 第二结构单元由式（1）或式（2）表示。

公开(公告)号：US20130316287A1

公开(公告)日：2013-11-28

申请号：US13955435

申请日：2013-07-31

Applicant: JSR Corporation

Inventor： Hirokazu SAKAKIBARA ,  Hiromu MIYATA ,  Taiichi FURUKAWA ,  Koji ITO

IPC: G03F7/004

CPC classification number: G03F7/038 ,  C08F220/18 ,  C08F220/28 ,  C08F224/00 ,  C08F2220/283 ,  C08F2220/382 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

Abstract: A photoresist composition includes a base polymer, a polymer and an acid generator. The base polymer includes a first structural unit that includes an acid-labile group. The polymer includes a second structural unit that includes an acid-labile group, and has a fluorine atom content higher than a fluorine atom content of the base polymer. The photoresist composition is developed using an organic solvent. The second structural unit is represented by a formula (1) or a formula (2). R1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. Z1 is a divalent monocyclic hydrocarbon group having 5 or 6 carbon atoms or a divalent polycyclic hydrocarbon group having 7 to 10 carbon atoms. R2 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R3 is an alicyclic hydrocarbon group having 5 to 20 carbon atoms.

Abstract translation: 光致抗蚀剂组合物包括基础聚合物，聚合物和酸发生剂。 基础聚合物包括包含酸不稳定基团的第一结构单元。 聚合物包括含有酸不稳定基团的第二结构单元，并且具有比基础聚合物的氟原子含量高的氟原子含量。 使用有机溶剂显影光致抗蚀剂组合物。 第二结构单元由式（1）或式（2）表示。 R1是氢原子，氟原子，甲基或三氟甲基。 Z 1是具有5或6个碳原子的二价单环烃基或具有7至10个碳原子的二价多环烃基。 R2是氢原子，氟原子，甲基或三氟甲基。 R3是碳原子数为5〜20的脂环族烃基。

公开(公告)号：US20130230803A1

公开(公告)日：2013-09-05

申请号：US13866087

申请日：2013-04-19

Applicant: JSR CORPORATION

Inventor： Koji ITO ,  Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Taiichi FURUKAWA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/004 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

Abstract: A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed with a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a base polymer, a fluorine-atom-containing polymer, a radiation-sensitive acid generator, a solvent, and a compound. The base polymer has an acid-labile group. The fluorine-atom-containing polymer has a content of fluorine atoms higher than a content of fluorine atoms of the base polymer. The compound has a relative permittivity greater than a relative permittivity of the solvent by at least 15. A content of the compound is no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer.

Abstract translation: 抗蚀剂图案形成方法包括在基板上涂布辐射敏感性树脂组合物以提供抗蚀剂膜。 抗蚀剂膜被曝光。 曝光的抗蚀剂膜用包含不少于80质量％的有机溶剂的显影剂溶液显影。 辐射敏感性树脂组合物包括基础聚合物，含氟原子的聚合物，辐射敏感性酸产生剂，溶剂和化合物。 基础聚合物具有酸不稳定基团。 含氟原子的聚合物的氟原子含量高于基础聚合物的氟原子含量。 化合物的相对介电常数大于溶剂的相对介电常数至少为15.相对于100质量份的碱，该化合物的含量为10质量份以上且200质量份以下 聚合物。

公开(公告)号：US20130230804A1

公开(公告)日：2013-09-05

申请号：US13866093

申请日：2013-04-19

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Taiichi FURUKAWA ,  Koji ITO

IPC: G03F7/027

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/10 ,  C08F220/24 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  Y10S430/114 ,  Y10S430/115

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A−X+  (1)

Abstract translation: 图案形成方法包括使用辐射敏感组合物在衬底上提供抗蚀剂膜。 抗蚀剂膜被曝光。 使用显影剂溶液显影曝光的抗蚀剂膜。 显影剂溶液含有不少于80质量％的有机溶剂。 辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感性酸产生剂。 第一聚合物包括具有酸不稳定基团的结构单元。 辐射敏感组合物的一种或多种组分具有由式（1）表示的基团。 A-表示-N-SO 2 -R D，-COO-，-O-或-SO 3 - 。 -SO 3 - 不直接键合到具有氟原子的碳原子。 RD表示直链或支链一价烃基等。 X +表示鎓阳离子。 -A-X +（1）

公开(公告)号：US20130224661A1

公开(公告)日：2013-08-29

申请号：US13855749

申请日：2013-04-03

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Koji ITO ,  Reiko KIMURA ,  Taiichi FURUKAWA

IPC: G03F7/20 ,  G03F7/004

CPC classification number: G03F7/20 ,  C08F20/28 ,  C08F2220/283 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

Abstract: A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

Abstract translation: 图案形成方法包括将辐射敏感性树脂组合物涂布在基材上以提供抗蚀剂膜。 抗蚀剂膜被曝光。 显影出抗蚀剂膜。 用于显影曝光的抗蚀剂膜的显影剂溶液包含不少于80质量％的有机溶剂。 辐射敏感性树脂组合物包括第一聚合物和辐射敏感性酸产生剂。 第一聚合物包括具有酸不稳定基团和脂环族基团的第一结构单元。 脂环族基团能够通过酸的作用避免与分子链的离解。

公开(公告)号：US20130337385A1

公开(公告)日：2013-12-19

申请号：US13972963

申请日：2013-08-22

Applicant: JSR CORPORATION

Inventor： Taiichi FURUKAWA ,  Koji ITO ,  Hiromu MIYATA ,  Hirokazu SAKAKIBARA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

Abstract: A negative pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The photoresist composition includes a first polymer and an organic solvent. The first polymer includes a first structural unit having an acid-generating capability. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract translation: 负型图案形成方法包括使用光致抗蚀剂组合物在基板上提供抗蚀剂膜。 光致抗蚀剂组合物包括第一聚合物和有机溶剂。 第一聚合物包括具有产酸能力的第一结构单元。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

公开(公告)号：US20150177616A1

公开(公告)日：2015-06-25

申请号：US14640882

申请日：2015-03-06

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Taiichi FURUKAWA ,  Koji ITO

IPC: G03F7/038 ,  G03F7/30

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/10 ,  C08F220/24 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  Y10S430/114 ,  Y10S430/115

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A−X+  (1)

Abstract translation: 图案形成方法包括使用辐射敏感组合物在衬底上提供抗蚀剂膜。 抗蚀剂膜被曝光。 使用显影剂溶液显影曝光的抗蚀剂膜。 显影剂溶液含有不少于80质量％的有机溶剂。 辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感性酸产生剂。 第一聚合物包括具有酸不稳定基团的结构单元。 辐射敏感组合物的一种或多种组分具有由式（1）表示的基团。 A-表示-N-SO 2 -R D，-COO-，-O-或-SO 3 - 。 -SO 3 - 不直接键合到具有氟原子的碳原子。 RD表示直链或支链一价烃基等。 X +表示鎓阳离子。 -A-X +（1）

公开(公告)号：US20130295506A1

公开(公告)日：2013-11-07

申请号：US13940119

申请日：2013-07-11

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Masafumi HORI ,  Koji ITO ,  Hiromu MIYATA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0041 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38

Abstract: A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the is like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Abstract translation: 抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物形成抗蚀剂涂膜。 使用含有不少于80质量％的有机溶剂的显影剂溶液将抗蚀剂涂膜曝光和显影。 辐射敏感性树脂组合物包括含有酸不稳定基团的聚合物和辐射敏感性酸产生剂的聚合物组分。 聚合物组分包括在相同聚合物或不同聚合物中的具有第一烃基的第一结构单元和具有第二烃基的第二结构单元。 第一个烃基是未取代或取代的支链基团，或类似的。 第二个烃基具有金刚烷骨架。 第二烃基与第一烃基的摩尔比小于1.聚合物组分中具有羟基的结构单元的比例小于5摩尔％。

公开(公告)号：US20130323653A1

公开(公告)日：2013-12-05

申请号：US13962919

申请日：2013-08-08

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Hiromu MIYATA ,  Koji ITO ,  Taiichi FURUKAWA

IPC: G03F7/20

CPC classification number: G03F7/20 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value γ of from 5.0 to 30.0. The contrast value γ is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.

Abstract translation: 抗蚀剂图案形成方法包括将辐射敏感性树脂组合物施加在基材上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含含酸不稳定基团的聚合物和光致酸产生剂。 抗蚀剂膜被曝光。 使用包含相对于显影剂总量不小于80质量％的量的有机溶剂的显影剂显影抗蚀剂膜。 辐射敏感性树脂组合物的对比度值为5.0〜30.0。 通过仅改变曝光抗蚀剂膜的光的剂量获得的抗蚀剂溶出对比度曲线来计算对比度值γ。