公开(公告)号：US20160097978A1

公开(公告)日：2016-04-07

申请号：US14877357

申请日：2015-10-07

Applicant: JSR Corporation

Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

公开(公告)号：US20150177616A1

公开(公告)日：2015-06-25

申请号：US14640882

申请日：2015-03-06

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Masafumi HORI ,  Taiichi FURUKAWA ,  Koji ITO

IPC: G03F7/038 ,  G03F7/30

CPC classification number: G03F7/038 ,  C07C381/12 ,  C08F220/10 ,  C08F220/24 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  Y10S430/114 ,  Y10S430/115

Abstract: A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A−X+  (1)

Abstract translation: 图案形成方法包括使用辐射敏感组合物在衬底上提供抗蚀剂膜。 抗蚀剂膜被曝光。 使用显影剂溶液显影曝光的抗蚀剂膜。 显影剂溶液含有不少于80质量％的有机溶剂。 辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感性酸产生剂。 第一聚合物包括具有酸不稳定基团的结构单元。 辐射敏感组合物的一种或多种组分具有由式（1）表示的基团。 A-表示-N-SO 2 -R D，-COO-，-O-或-SO 3 - 。 -SO 3 - 不直接键合到具有氟原子的碳原子。 RD表示直链或支链一价烃基等。 X +表示鎓阳离子。 -A-X +（1）

公开(公告)号：US20130295506A1

公开(公告)日：2013-11-07

申请号：US13940119

申请日：2013-07-11

Applicant: JSR CORPORATION

Inventor： Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Masafumi HORI ,  Koji ITO ,  Hiromu MIYATA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0041 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38

Abstract: A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the is like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.

Abstract translation: 抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物形成抗蚀剂涂膜。 使用含有不少于80质量％的有机溶剂的显影剂溶液将抗蚀剂涂膜曝光和显影。 辐射敏感性树脂组合物包括含有酸不稳定基团的聚合物和辐射敏感性酸产生剂的聚合物组分。 聚合物组分包括在相同聚合物或不同聚合物中的具有第一烃基的第一结构单元和具有第二烃基的第二结构单元。 第一个烃基是未取代或取代的支链基团，或类似的。 第二个烃基具有金刚烷骨架。 第二烃基与第一烃基的摩尔比小于1.聚合物组分中具有羟基的结构单元的比例小于5摩尔％。

公开(公告)号：US20240393688A1

公开(公告)日：2024-11-28

申请号：US18796665

申请日：2024-08-07

Applicant: JSR CORPORATION

Inventor： Ryuichi NEMOTO ,  Taiichi FURUKAWA ,  Tsuyoshi FURUKAWA ,  Hajime INAMI

IPC: G03F7/039 ,  G03F7/004

Abstract: A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by formula (1) and a structural unit different from the structural unit (I); an onium salt represented by formula (i); and a solvent. In formula (1), RK1 is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group, L1 is an alkanediyl group having 1 to 5 carbon atoms, and Rf1 is a fluorinated hydrocarbon group having 2 to 10 carbon atoms and 5 to 7 fluorine atoms. In formula (i), Ra1 is a substituted or unsubstituted monovalent organic group having 1 to 40 carbon atoms with no fluorine atom or fluorinated hydrocarbon group attached to an atom adjacent to the sulfur atom, and X+ is a monovalent onium cation.

公开(公告)号：US20240393687A1

公开(公告)日：2024-11-28

申请号：US18795534

申请日：2024-08-06

Applicant: JSR CORPORATION

Inventor： Fuyuki EGAWA ,  Taiichi FURUKAWA ,  Tsuyoshi FURUKAWA ,  Hajime INAMI ,  Ryuichi NEMOTO

IPC: G03F7/039 ,  C08F220/28 ,  C08F220/36 ,  G03F7/004 ,  G03F7/038

Abstract: A radiation-sensitive resin composition includes: a polymer comprising a structural unit (I) represented by a formula (1) and a structural unit different from the structural unit (I); a radiation-sensitive acid generator represented by a formula (α); and a solvent. RK1 is a hydrogen atom, a fluorine atom, or the like, L1 is an alkanediyl group, and Rf1 is a fluorinated hydrocarbon group. RW is a monovalent organic group having 3 to 40 carbon atoms that contains a cyclic structure, Rfa and Rfb are each independently a fluorine atom or the like, R11 and R12 are each independently a hydrogen atom, a fluorine atom, or the like, n1 is an integer of 1 to 4, n2 is an integer of 0 to 4, no carbonyl group is present between a sulfur atom of the sulfonic acid ion and the cyclic structure of RW, and Z+ is a monovalent onium cation.

公开(公告)号：US20160320705A1

公开(公告)日：2016-11-03

申请号：US15210643

申请日：2016-07-14

Applicant: JSR Corporation

Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

IPC: G03F7/16 ,  G03F7/09

CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

公开(公告)号：US20130337385A1

公开(公告)日：2013-12-19

申请号：US13972963

申请日：2013-08-22

Applicant: JSR CORPORATION

Inventor： Taiichi FURUKAWA ,  Koji ITO ,  Hiromu MIYATA ,  Hirokazu SAKAKIBARA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

Abstract: A negative pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The photoresist composition includes a first polymer and an organic solvent. The first polymer includes a first structural unit having an acid-generating capability. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract translation: 负型图案形成方法包括使用光致抗蚀剂组合物在基板上提供抗蚀剂膜。 光致抗蚀剂组合物包括第一聚合物和有机溶剂。 第一聚合物包括具有产酸能力的第一结构单元。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

公开(公告)号：US20220229367A1

公开(公告)日：2022-07-21

申请号：US17713278

申请日：2022-04-05

Applicant: JSR CORPORATION

Inventor： Ryuichi NEMOTO ,  Satoshi OKAZAKI ,  Taiichi FURUKAWA

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: A radiation-sensitive resin composition includes: a first polymer including a structural unit which includes an acid-labile group; a second polymer including a structural unit represented by formula (1); and a radiation-sensitive acid generator. R1 represents a monovalent organic group having 1 to 20 carbon atoms; R2 represents a monovalent organic group having 1 to 20 carbon atoms; X represents a divalent organic group having 1 to 20 carbon atoms; and Y represents a divalent hydrocarbon group having 1 to 20 carbon atoms. The divalent organic group represented by X, the monovalent organic group represented by R2, or both has a fluorine atom.

公开(公告)号：US20150160556A1

公开(公告)日：2015-06-11

申请号：US14627670

申请日：2015-02-20

Applicant: JSR Corporation

Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

IPC: G03F7/16 ,  G03F7/30

CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

公开(公告)号：US20140134544A1

公开(公告)日：2014-05-15

申请号：US14158160

申请日：2014-01-17

Applicant: JSR Corporation

Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

IPC: G03F7/20

CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。