公开(公告)号：US20250110407A1

公开(公告)日：2025-04-03

申请号：US18910163

申请日：2024-10-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Daiki TATSUBO ,  Sho YOSHINAKA ,  Shunpei AKITA ,  Satoshi DEI ,  Eiji YONEDA ,  Kengo EHARA

IPC: G03F7/039 ,  C08F220/30 ,  C08F220/38 ,  C08G61/12 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.