Abstract:
A composition includes a polymer and a solvent. The polymer includes: a structural unit including a ring structure; and a functional group capable of bonding to a metal atom. An atom chain constituting the ring structure constitutes a part of a main chain of the polymer. The polymer preferably includes at an end of the main chain or at an end of a side chain, a group including the functional group. The functional group is preferably a cyano group, a phosphono group, or a dihydroxyboryl group. The ring structure preferably includes an alicyclic structure.
Abstract:
A composition includes a polymer and a solvent. The polymer (A) satisfies at least one of the conditions (i) and (ii): (i) having in one terminal part of a main chain a block of a first structural unit that includes an amino group; and (ii) having a sulfur atom bonding to one end of the main chain, wherein a monovalent group that includes an amino group bonds to the sulfur atom.
Abstract:
A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.
Abstract:
A composition includes a polymer (1) having a partial structure represented by formula (1), and a solvent. X is a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms. Y is a monovalent organic group having 1 to 12 carbon atoms and containing a hetero atom or a monovalent inorganic acid group. Z is a linking group represented by —O—, —S—, or —NR—, where R is an organic group having 1 to 20 carbon atoms. R1 and R2 are each independently a hydrogen atom, a halogen atom, or an organic group having 1 to 20 carbon atoms, or the like.
Abstract:
A composition includes a polymer and a solvent. The polymer includes a group (X) which is at least one selected from the group consisting of: a group including at least two cyano groups; a group including —B(OR)2; a group including —PO(OR)2; and a group including —P(OR)2. Each R independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably includes the group (X) at an end of a main chain thereof or at an end of a side chain thereof.
Abstract:
A method of producing a substrate includes: applying a composition on a metal basal plate to form a coating film; and forming a metal-containing layer on at least a part of the coating film. The composition contains a solvent, and a polymer having a first terminal structure and a second terminal structure in a single molecule. Each of the first terminal structure and the second terminal structure is at least one selected from the group consisting of a structure represented by formula (1) and a structure represented by formula (2). A1 and A2 each independently represent a monovalent group having a functional group capable of forming a chemical bond with a metal atom. L2 represents —S—, —NR—, or —NA22-, wherein A22 represents a monovalent group having a functional group capable of forming a chemical bond with a metal atom.
Abstract:
A selective modification method of a base material surface includes subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment. The base material includes a surface layer and includes an oxide, a nitride or an oxynitride of silicon, or a combination thereof in a first region of the surface layer. A nonphotosensitive composition is applied directly or indirectly on the surface of the base material after the surface treatment. The nonphotosensitive composition includes: a first polymer containing a nitrogen atom; and a solvent. It is preferred that the base material contains a metal in a second region which is other than the first region of the surface layer. In the surface treatment step, an O2 plasma treatment is preferably conducted.
Abstract:
A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.
Abstract:
A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200. (En-AD)m (1)
Abstract:
A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer defects, and in turn capable of forming a pattern having a fine and favorable shape. A composition for pattern formation contains a block copolymer that forms a phase separation structure by directed self-assembly, and a solvent, in which the block copolymer has a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of the main chain and links to the first block, in which the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded thereto. The first group may be a monovalent hydrocarbon group having 3 to 25 carbon atoms, or a monovalent aromatic heterocyclic group having 3 to 25 carbon atoms and one hetero atom that constitutes the ring.