公开(公告)号：US20220089809A1

公开(公告)日：2022-03-24

申请号：US17541317

申请日：2021-12-03

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Motohiro SHIRATANI ,  Tatsuya SAKAI

IPC: C08G61/02 ,  C09D165/00 ,  B05D3/02

Abstract: A composition includes a polymer and a solvent. The polymer includes: a structural unit including a ring structure; and a functional group capable of bonding to a metal atom. An atom chain constituting the ring structure constitutes a part of a main chain of the polymer. The polymer preferably includes at an end of the main chain or at an end of a side chain, a group including the functional group. The functional group is preferably a cyano group, a phosphono group, or a dihydroxyboryl group. The ring structure preferably includes an alicyclic structure.

公开(公告)号：US20200040209A1

公开(公告)日：2020-02-06

申请号：US16528707

申请日：2019-08-01

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Motohiro Shiratani ,  Miki Tamada

IPC: C09D125/14 ,  G03F7/11 ,  C08F212/08 ,  C08F220/14 ,  C09D133/14

Abstract: A composition includes a polymer and a solvent. The polymer (A) satisfies at least one of the conditions (i) and (ii): (i) having in one terminal part of a main chain a block of a first structural unit that includes an amino group; and (ii) having a sulfur atom bonding to one end of the main chain, wherein a monovalent group that includes an amino group bonds to the sulfur atom.

公开(公告)号：US20240255852A1

公开(公告)日：2024-08-01

申请号：US18435001

申请日：2024-02-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Eiji YONEDA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

CPC classification number: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

Abstract: A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

公开(公告)号：US20230203229A1

公开(公告)日：2023-06-29

申请号：US18108108

申请日：2023-02-10

Applicant: JSR CORPORATION

Inventor： Miki TAMADA ,  Ryo KUMEGAWA ,  Motohiro SHIRATANI ,  Hiroyuki KOMATSU ,  Ken MARUYAMA ,  Sosuke OSAWA

IPC: C08F297/02 ,  G03F7/00 ,  G03F7/075

CPC classification number: C08F297/026 ,  G03F7/0035 ,  G03F7/0757 ,  C08F2810/40

Abstract: A composition includes a polymer (1) having a partial structure represented by formula (1), and a solvent. X is a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms. Y is a monovalent organic group having 1 to 12 carbon atoms and containing a hetero atom or a monovalent inorganic acid group. Z is a linking group represented by —O—, —S—, or —NR—, where R is an organic group having 1 to 20 carbon atoms. R1 and R2 are each independently a hydrogen atom, a halogen atom, or an organic group having 1 to 20 carbon atoms, or the like.

公开(公告)号：US20220259741A1

公开(公告)日：2022-08-18

申请号：US17735151

申请日：2022-05-03

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Motohiro Shiratani

IPC: C23C18/06 ,  C09D185/02 ,  C09D185/04 ,  C09D5/20 ,  C23C18/12 ,  C23G1/02

Abstract: A composition includes a polymer and a solvent. The polymer includes a group (X) which is at least one selected from the group consisting of: a group including at least two cyano groups; a group including —B(OR)2; a group including —PO(OR)2; and a group including —P(OR)2. Each R independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably includes the group (X) at an end of a main chain thereof or at an end of a side chain thereof.

公开(公告)号：US20210189553A1

公开(公告)日：2021-06-24

申请号：US17196006

申请日：2021-03-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Miki TAMADA ,  Ryo KUMEGAWA ,  Tatsuya SAKAI

IPC: C23C16/06 ,  B05D1/00 ,  C23C16/455

Abstract: A method of producing a substrate includes: applying a composition on a metal basal plate to form a coating film; and forming a metal-containing layer on at least a part of the coating film. The composition contains a solvent, and a polymer having a first terminal structure and a second terminal structure in a single molecule. Each of the first terminal structure and the second terminal structure is at least one selected from the group consisting of a structure represented by formula (1) and a structure represented by formula (2). A1 and A2 each independently represent a monovalent group having a functional group capable of forming a chemical bond with a metal atom. L2 represents —S—, —NR—, or —NA22-, wherein A22 represents a monovalent group having a functional group capable of forming a chemical bond with a metal atom.

公开(公告)号：US20200051813A1

公开(公告)日：2020-02-13

申请号：US16550695

申请日：2019-08-26

Applicant: JSR CORPORATION

Inventor： Hitoshi OSAKI ,  Hiroyuki KOMATSU

IPC: H01L21/02

Abstract: A selective modification method of a base material surface includes subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment. The base material includes a surface layer and includes an oxide, a nitride or an oxynitride of silicon, or a combination thereof in a first region of the surface layer. A nonphotosensitive composition is applied directly or indirectly on the surface of the base material after the surface treatment. The nonphotosensitive composition includes: a first polymer containing a nitrogen atom; and a solvent. It is preferred that the base material contains a metal in a second region which is other than the first region of the surface layer. In the surface treatment step, an O2 plasma treatment is preferably conducted.

公开(公告)号：US20190198317A1

公开(公告)日：2019-06-27

申请号：US16288385

申请日：2019-02-28

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Tomohiro Oda ,  Hitoshi Osaki ,  Masafumi Hori ,  Takehiko Naruoka

IPC: H01L21/027 ,  C23C16/02 ,  H01L21/02 ,  H01L21/311 ,  C09D5/00 ,  C09D125/06 ,  C09D183/04 ,  C09D125/16 ,  C09D133/12 ,  C09D7/20

CPC classification number: H01L21/0271 ,  B05D3/02 ,  B05D7/00 ,  C09D5/008 ,  C09D7/20 ,  C09D125/06 ,  C09D125/16 ,  C09D133/12 ,  C09D183/04 ,  C23C16/0227 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02334 ,  H01L21/02359 ,  H01L21/3065 ,  H01L21/31133

Abstract: A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

公开(公告)号：US20170088740A1

公开(公告)日：2017-03-30

申请号：US15374342

申请日：2016-12-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: C09D125/14 ,  G03F7/11 ,  C09D133/12 ,  G03F7/00

CPC classification number: C09D125/14 ,  C08F220/14 ,  C09D133/06 ,  C09D133/12 ,  G03F7/0002 ,  G03F7/0388 ,  G03F7/11 ,  C08F2220/325 ,  C08F212/08 ,  C08F2220/1841

Abstract: A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200. (En-AD)m  (1)

公开(公告)号：US20160293408A1

公开(公告)日：2016-10-06

申请号：US15074053

申请日：2016-03-18

Applicant: JSR Corporation

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Tomoki NAGAI

IPC: H01L21/02 ,  H01L21/311 ,  C08F293/00 ,  C09D133/12

CPC classification number: C08F293/00 ,  C08G18/61 ,  C08G77/38 ,  C09D153/00 ,  C09D183/00 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/165 ,  H01L21/02112 ,  H01L21/0274 ,  H01L21/3065 ,  H01L21/3081

Abstract: A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer defects, and in turn capable of forming a pattern having a fine and favorable shape. A composition for pattern formation contains a block copolymer that forms a phase separation structure by directed self-assembly, and a solvent, in which the block copolymer has a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of the main chain and links to the first block, in which the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded thereto. The first group may be a monovalent hydrocarbon group having 3 to 25 carbon atoms, or a monovalent aromatic heterocyclic group having 3 to 25 carbon atoms and one hetero atom that constitutes the ring.

Abstract translation: 一种用于图案形成的组合物，其能够形成具有规则阵列结构的定向自组装膜，其具有精细的间距，伴随着较少的缺陷，并且进而能够形成具有良好形状的图案。 用于图案形成的组合物包含通过定向自组装形成相分离结构的嵌段共聚物和其中嵌段共聚物具有由包含硅原子的第一重复单元组成的第一嵌段的溶剂，第二嵌段组成 的不包含硅原子的第二重复单元，以及键合到主链的至少一个末端并连接到第一嵌段的第一基团，其中第一基团是形成具有C的化合物的一价基团 对数P不小于2.4，条件是甲基与键结合。 第一基团可以是具有3〜25个碳原子的一价烃基或具有3〜25个碳原子的一价芳族杂环基和构成环的一个杂原子。