公开(公告)号：US20240255852A1

公开(公告)日：2024-08-01

申请号：US18435001

申请日：2024-02-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Eiji YONEDA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

CPC classification number: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

Abstract: A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

公开(公告)号：US20240288773A1

公开(公告)日：2024-08-29

申请号：US18636755

申请日：2024-04-16

Applicant: JSR CORPORATION

Inventor： Masato DOBASHI ,  Hiroyuki KOMATSU ,  Eiji YONEDA ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  G03F7/075 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0752 ,  G03F7/322 ,  H01L21/0275

Abstract: A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US20220197144A1

公开(公告)日：2022-06-23

申请号：US17689193

申请日：2022-03-08

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Tsubasa ABE ,  Masato DOBASHI ,  Kazunori TAKANASHI

IPC: G03F7/11 ,  C07C13/567 ,  C07C13/62 ,  C07C13/66 ,  C07C69/616 ,  C07D209/08 ,  C07D317/50

Abstract: A composition includes: a compound including an aromatic hydrocarbon ring structure, and a partial structure represented by formula (1) which bonds to the aromatic hydrocarbon ring structure; and a solvent. The aromatic hydrocarbon ring structure has no fewer than 25 carbon atoms. In the formula (1), X represents a group represented by formula (i), (ii), (iii), or (iv); and *'s denote binding sites to two adjacent carbon atoms constituting the aromatic hydrocarbon ring structure. A method of producing a patterned substrate, includes applying the composition directly or indirectly on a substrate to form a resist underlayer film; forming a resist pattern directly or indirectly on the resist underlayer film; and carrying out etching using the resist pattern as a mask.

公开(公告)号：US20250110407A1

公开(公告)日：2025-04-03

申请号：US18910163

申请日：2024-10-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Daiki TATSUBO ,  Sho YOSHINAKA ,  Shunpei AKITA ,  Satoshi DEI ,  Eiji YONEDA ,  Kengo EHARA

IPC: G03F7/039 ,  C08F220/30 ,  C08F220/38 ,  C08G61/12 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.

公开(公告)号：US20230341778A1

公开(公告)日：2023-10-26

申请号：US18209751

申请日：2023-06-14

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Kengo EHARA ,  Hiroki NAKATSU ,  Masato DOBASHI ,  Hiroyuki MIYAUCHI

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/38 ,  H01L21/311

CPC classification number: G03F7/11 ,  G03F7/094 ,  G03F7/38 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method for manufacturing a semiconductor substrate includes forming a resist underlayer film directly or indirectly on a substrate by applying a composition. The composition includes a compound and a solvent. The compound includes: at least one nitrogen-containing ring structure selected from the group consisting of a pyridine ring structure and a pyrimidine ring structure; and a partial structure represented by formula (1-1) or (1-2). X1 and X2 are each independently a group represented by formula (i), (ii), (iii), or (iv); * is a bond with a moiety of the compound other than the partial structure represented by formula (1-1) or (1-2); and Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic ring having 5 to 20 ring members that forms a fused ring structure together with the two adjacent carbon atoms in the formulas (1-1) and (1-2).