公开(公告)号：US20240231231A1

公开(公告)日：2024-07-11

申请号：US18440124

申请日：2024-02-13

Applicant: JSR CORPORATION

Inventor： Daiki TATSUBO ,  Tomoharu KAWAZU ,  Hiroyuki MIYAUCHI ,  Yuya HAYASHI ,  Takashi KATAGIRI ,  Ryotaro TANAKA

IPC: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/308 ,  H01L21/311

CPC classification number: G03F7/11 ,  C09D161/06 ,  C09D161/12 ,  H01L21/3081 ,  H01L21/31116

Abstract: A method for forming a resist underlayer film includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a coating film. The coating film is heated at a heating temperature of higher than 450° C. and 600° C. or lower in an atmosphere having an oxygen concentration of less than 0.01% by volume. The composition for forming a resist underlayer film includes: a compound including an aromatic ring; a polymer which thermally decomposes at the heating temperature in heating the coating film, and which is other than the compound; and a solvent. The compound has a molecular weight of 400 or more. A content of the polymer is less than a content of the compound in the composition for forming a resist underlayer film.

公开(公告)号：US20250110407A1

公开(公告)日：2025-04-03

申请号：US18910163

申请日：2024-10-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Daiki TATSUBO ,  Sho YOSHINAKA ,  Shunpei AKITA ,  Satoshi DEI ,  Eiji YONEDA ,  Kengo EHARA

IPC: G03F7/039 ,  C08F220/30 ,  C08F220/38 ,  C08G61/12 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.