公开(公告)号：US20130233826A1

公开(公告)日：2013-09-12

申请号：US13785466

申请日：2013-03-05

Applicant: JSR CORPORATION

Inventor： Tomoaki SEKO ,  Fumihiro TOYOKAWA ,  Yuushi MATSUMURA ,  Tooru KIMURA

IPC: G03F7/11

CPC classification number: G03F7/11 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和有机溶剂组合物。 有机溶剂组合物包括标准沸点小于150.0℃的亚烷基二醇单烷基醚乙酸酯和标准沸点不低于150.0℃的有机溶剂。在有机溶剂组合物中， 亚烷基二醇单烷基醚乙酸酯的含量为50质量％以上且99质量％以下，有机溶剂的含量为1质量％以上且50质量％以下。

公开(公告)号：US20160085152A1

公开(公告)日：2016-03-24

申请号：US14959223

申请日：2015-12-04

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Fumihiro TOYOKAWA ,  Goji WAKAMATSU ,  Shingo TAKASUGI ,  Tooru KIMURA

IPC: G03F7/11 ,  G03F7/36 ,  C07C15/14 ,  C07C211/50 ,  C07C15/18 ,  G03F7/16 ,  C07C33/28

CPC classification number: G03F7/11 ,  C07C15/14 ,  C07C15/18 ,  C07C15/50 ,  C07C15/54 ,  C07C15/58 ,  C07C25/24 ,  C07C33/28 ,  C07C33/38 ,  C07C39/21 ,  C07C43/215 ,  C07C211/50 ,  C07C211/58 ,  C08F38/00 ,  G03F7/094 ,  G03F7/168 ,  G03F7/36 ,  H01L21/0271

Abstract: A composition for film formation includes a compound represented by formula (1) and a solvent. In the formula (1), R1, R2 and R3 each independently represent a group represented by the formula (a). In the formula (a), RA represents a hydrogen atom, an aryl group, or an alkyl group unsubstituted or substituted with at least one of a hydroxy group and an aryl group. RB represents a single bond or an arylene group. A part or all of hydrogen atoms on an aromatic ring of the aryl group and the arylene group may be substituted with a halogen atom, a hydroxy group, an amino group, a sulfanyl group, or a monovalent organic group having 1 to 20 carbon atoms and not including an aromatic ring.

Abstract translation: 用于成膜的组合物包括由式（1）表示的化合物和溶剂。 在式（1）中，R 1，R 2和R 3各自独立地表示由式（a）表示的基团。 在式（a）中，RA表示氢原子，芳基或未被取代或被羟基和芳基中的至少一个取代的烷基。 RB表示单键或亚芳基。 芳基和亚芳基的芳环上的一部分或全部氢原子可以被卤素原子，羟基，氨基，硫烷基或碳原子数为1〜20的一价有机基团取代 而不包括芳环。

公开(公告)号：US20130256264A1

公开(公告)日：2013-10-03

申请号：US13853131

申请日：2013-03-29

Applicant: JSR CORPORATION

Inventor： Hiromitsu TANAKA ,  Junya SUZUKI ,  Masayuki MOTONARI ,  Tooru KIMURA

IPC: G03F7/09

CPC classification number: G03F7/094 ,  G03F7/004 ,  G03F7/075 ,  G03F7/0752

Abstract: A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R3s are identical or different.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和溶剂组合物。 溶剂组合物包括含有由下式（1）表示的化合物或碳酸酯化合物的标准沸点不低于150.0℃的有机溶剂.R 1和R 2各自独立地表示氢原子，烷基 具有1至4个碳原子的基团或具有1至4个碳原子的酰基。 R3表示氢原子或甲基。 n为1〜4的整数。在n为2以上的情况下，多个R3相同或不同。

公开(公告)号：US20130233825A1

公开(公告)日：2013-09-12

申请号：US13787674

申请日：2013-03-06

Applicant: JSR CORPORATION

Inventor： Shunsuke KURITA ,  Kazunori TAKANASHI ,  Hiromitsu NAKASHIMA ,  Tooru KIMURA

IPC: G03F7/09

CPC classification number: G03F7/0757 ,  G03F7/0752 ,  G03F7/094

Abstract: A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和溶剂。 溶剂包括标准沸点不低于150.0℃的有机溶剂和水。 相对于溶剂的总量，有机溶剂的含量为1质量％以上且50质量％以下。 相对于溶剂的总量，水的含量为1质量％以上且30质量％以下。