COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD
    1.
    发明申请
    COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD 审中-公开
    用于膜形成的组合物和形成图案的方法

    公开(公告)号:US20150284539A1

    公开(公告)日:2015-10-08

    申请号:US14671255

    申请日:2015-03-27

    Abstract: A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysis compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.

    Abstract translation: 用于成膜的组合物包括水解化合物和溶剂组合物。 水解化合物是包含可水解基团的金属化合物,金属化合物的水解缩合产物,金属化合物与式(1)表示的化合物的缩合产物或其组合的水解产物。 金属化合物包括来自第3,4,5,6,7,8,9,10,11,12或13族的金属元素或其组合。 溶剂组合物包括醇有机溶剂和不包含醇羟基并且包括含有杂原子的基团的非醇有机溶剂。

    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD
    2.
    发明申请
    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD 有权
    用于形成电阻膜和图案形成方法的组合物

    公开(公告)号:US20130233825A1

    公开(公告)日:2013-09-12

    申请号:US13787674

    申请日:2013-03-06

    CPC classification number: G03F7/0757 G03F7/0752 G03F7/094

    Abstract: A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

    Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和溶剂。 溶剂包括标准沸点不低于150.0℃的有机溶剂和水。 相对于溶剂的总量,有机溶剂的含量为1质量%以上且50质量%以下。 相对于溶剂的总量,水的含量为1质量%以上且30质量%以下。

    COMPOSITION AND PATTERN-FORMING METHOD
    3.
    发明申请
    COMPOSITION AND PATTERN-FORMING METHOD 审中-公开
    组成和图案形成方法

    公开(公告)号:US20160187777A1

    公开(公告)日:2016-06-30

    申请号:US15064920

    申请日:2016-03-09

    Abstract: A composition includes a metal compound and a solvent. The metal compound includes: a plurality of metal atoms of titanium, tantalum, zirconium, tungsten or a combination thereof; oxygen atoms each crosslinking the metal atoms; and polydentate ligands each coordinating to the metal atom. An absolute molecular weight of the metal compound as determined by static light scattering is no less than 8,000 and no greater than 50,000. A pattern-forming method includes applying the composition on an upper face side of a substrate to form an inorganic film. A resist pattern is formed on an upper face side of the inorganic film. The inorganic film and the substrate are dry-etched, by each separate etching operation, using the resist pattern as a mask such that the substrate has a pattern.

    Abstract translation: 组合物包括金属化合物和溶剂。 金属化合物包括:钛,钽,锆,钨的多个金属原子或其组合; 氧原子各自交联金属原子; 和多齿配体,各配位于金属原子上。 通过静态光散射确定的金属化合物的绝对分子量不小于8000,不大于50,000。 图案形成方法包括在基材的上表面侧涂布组合物以形成无机膜。 在无机膜的上表面侧形成抗蚀剂图案。 通过每次单独的蚀刻操作,使用抗蚀剂图案作为掩模来使无机膜和衬底被干蚀刻,使得衬底具有图案。

Patent Agency Ranking