Abstract:
A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysis compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.
Abstract:
A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.
Abstract:
A composition includes a metal compound and a solvent. The metal compound includes: a plurality of metal atoms of titanium, tantalum, zirconium, tungsten or a combination thereof; oxygen atoms each crosslinking the metal atoms; and polydentate ligands each coordinating to the metal atom. An absolute molecular weight of the metal compound as determined by static light scattering is no less than 8,000 and no greater than 50,000. A pattern-forming method includes applying the composition on an upper face side of a substrate to form an inorganic film. A resist pattern is formed on an upper face side of the inorganic film. The inorganic film and the substrate are dry-etched, by each separate etching operation, using the resist pattern as a mask such that the substrate has a pattern.