公开(公告)号：US20100166981A1

公开(公告)日：2010-07-01

申请号：US12347940

申请日：2008-12-31

申请人： JUAN E. DOMINGUEZ ,  ADRIEN R. LAVOIE ,  JOHN J. PLOMBON ,  HARSONO S. SIMKA

发明人： JUAN E. DOMINGUEZ ,  ADRIEN R. LAVOIE ,  JOHN J. PLOMBON ,  HARSONO S. SIMKA

IPC分类号： C23C16/513 ,  C23C16/44

CPC分类号： C23C16/45536 ,  C23C16/18 ,  C23C16/44 ,  C23C16/45525 ,  C23C16/4581 ,  C23C16/487

摘要： A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge.

摘要翻译： 一种方法，包括向腔室中的基板施加电荷; 将有机金属取代基引入室中，有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。 一种方法，包括将可移除的电荷施加到基底上; 在所施加的电荷的存在下，将有机金属取代基引入室中，所述有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。 一种包括将有机金属取代基引入到室中的方法，包括金属配体和有机配体的有机金属取代基; 以及通过用外部施加的电荷还原有机金属取代基的金属配体来沉积金属膜。