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公开(公告)号：US09385033B2
公开(公告)日：2016-07-05
申请号：US14040109
申请日：2013-09-27
IPC分类号： H01L21/06 , H01L21/768 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18 , C23C16/455 , H01L21/285
CPC分类号： H01L21/76843 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18 , C23C16/45553 , H01L21/28556 , H01L21/28562 , H01L21/76898
摘要： A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co2(CO)6(R1C≡CR2), wherein R1 and R2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted; (ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt(II) complex comprising nitrogen-based supporting ligands.
摘要翻译： 金属前体和包括在集成电路器件上分解金属前体的方法; 以及从所述金属前体形成金属，其中所述金属前体选自（i）Co 2（CO）6（R 1C≡CR2）），其中R 1和R 2分别选自直链或支链一价烃基 具有1-6个可被中断和取代的碳原子; （ii）羰基亚硝酰基单核羰基; （iii）键合到硼，铟，锗和锡部分之一的羰基钴; （iv）键合到单核或双核烯丙基的羰基钴; 和（v）包含氮基支持配体的钴（II）络合物。
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2.发明授权公开(公告)号：US08319287B2
公开(公告)日：2012-11-27
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译： 这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。 在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。 在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。
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公开(公告)号：US07982204B2
公开(公告)日：2011-07-19
申请号：US12788603
申请日：2010-05-27
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译： 不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。 在一个实施方案中，铜的前体沉积在氮化屏障上。 然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。
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4.发明申请公开(公告)号：US20100140717A1
公开(公告)日：2010-06-10
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L27/092
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译： 这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。 在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。 在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。
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公开(公告)号：US20080102632A1
公开(公告)日：2008-05-01
申请号：US11591792
申请日：2006-11-01
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , C23C16/45529 , C23C18/08 , C23C18/1216 , C23C18/1295 , C23C18/1605 , C23C18/165 , C23C18/1889 , C25D5/02 , C25D7/123 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process. Ruthenium precursors that may be used include ruthenium containing carbonyls, arenes, cyclopentadienyls, and certain other ruthenium containing compounds. The ruthenium precursors include iodine to catalyze a subsequent copper metal deposition and to smooth the surface of the ruthenium layer. The iodine concentration across the thickness of the ruthenium barrier layer may be constant or may be graded.
摘要翻译： 在ALD或CVD工艺中使用新颖的含碘钌前体形成在集成电路内与铜互连一起使用的掺碘钌阻挡层。 可以使用的钌前体包括含钌的羰基，芳烃，环戊二烯基和某些其它含钌化合物。 钌前体包括碘以催化随后的铜金属沉积并平滑钌层的表面。 钌阻挡层的厚度上的碘浓度可以是恒定的或可以分级的。
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公开(公告)号：US08344352B2
公开(公告)日：2013-01-01
申请号：US13185094
申请日：2011-07-18
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译： 不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。 在一个实施方案中，铜的前体沉积在氮化屏障上。 然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。
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7.发明申请公开(公告)号：US20080045013A1
公开(公告)日：2008-02-21
申请号：US11506358
申请日：2006-08-18
申请人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka , Ting Zhong , Eric Dickey , Bill Barrow
发明人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka , Ting Zhong , Eric Dickey , Bill Barrow
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An iridium encased copper interconnect comprises an iridium liner formed within a trench in a dielectric layer, wherein the iridium liner is formed directly on the dielectric layer, a copper interconnect formed on the iridium liner, and an iridium capping layer formed on the copper interconnect. The iridium encased copper interconnect may be fabricated by providing a semiconductor substrate in a reactor, wherein the semiconductor substrate includes a trench etched into a dielectric layer, pulsing trimethylaluminum into the reactor proximate to the semiconductor substrate, pulsing an iridium precursor into the reactor proximate to the semiconductor substrate, wherein the trimethylaluminum enables an iridium species to deposit directly on the dielectric layer, depositing a copper seed layer on the iridium species layer using an electroless deposition process, and depositing a bulk copper layer on the copper seed layer using an electroplating process.
摘要翻译： 铱包裹的铜互连包括形成在电介质层的沟槽内的铱衬里，其中铱衬垫直接形成在电介质层上，形成在铱衬垫上的铜互连以及形成在铜互连上的铱覆盖层。 可以通过在反应器中提供半导体衬底来制造铱包络铜互连，其中半导体衬底包括蚀刻到电介质层中的沟槽，将靠近半导体衬底的三甲基铝脉冲发射到反应器中，将铱前驱物脉冲至接近于 所述半导体衬底，其中所述三甲基铝能够使铱物质直接沉积在所述电介质层上，使用无电沉积工艺在所述铱物质层上沉积铜籽晶层，并且使用电镀工艺在所述铜籽晶层上沉积大块铜层 。
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公开(公告)号：US08425987B2
公开(公告)日：2013-04-23
申请号：US12347940
申请日：2008-12-31
CPC分类号： C23C16/45536 , C23C16/18 , C23C16/44 , C23C16/45525 , C23C16/4581 , C23C16/487
摘要： A method including applying an electric charge to a substrate in a chamber; introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including applying a removable electric charge to a substrate; in the presence of the applied electric charge, introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent. A method including introducing an organometallic substituent into the chamber, the organometallic substituent including a metal ligand and an organic ligand; and depositing a metal film by reducing the metal ligand of the organometallic substituent with an externally applied electric charge.
摘要翻译： 一种方法，包括向腔室中的基板施加电荷; 将有机金属取代基引入室中，有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。 一种方法，包括将可移除的电荷施加到基底上; 在所施加的电荷的存在下，将有机金属取代基引入室中，所述有机金属取代基包括金属配体和有机配体; 以及通过还原有机金属取代基的金属配体沉积金属膜。 一种包括将有机金属取代基引入到室中的方法，包括金属配体和有机配体的有机金属取代基; 以及通过用外部施加的电荷还原有机金属取代基的金属配体来沉积金属膜。
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9.发明授权Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill 有权无氟前体和沉积用于纳米互连种子和填充物的共形导电膜的方法公开(公告)号：US07858525B2
公开(公告)日：2010-12-28
申请号：US11694677
申请日：2007-03-30
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka , Bryan C. Hendrix , Gregory T. Stauf
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka , Bryan C. Hendrix , Gregory T. Stauf
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/32056 , H01L21/76861 , H01L21/76873
摘要： A method including introducing a fluorine-free organometallic precursor in the presence of a substrate; and forming a conductive layer including a moiety of the organometallic precursor on the substrate according to an atomic layer or chemical vapor deposition process. A method including forming an opening through a dielectric layer to a contact point; introducing a fluorine-free copper film precursor and a co-reactant; and forming a copper-containing seed layer in the opening. A system including a computer including a microprocessor electrically coupled to a printed circuit board, the microprocessor including conductive interconnect structures formed from fluorine-free organometallic precursor.
摘要翻译： 一种包括在基材存在下引入无氟有机金属前体的方法; 以及根据原子层或化学气相沉积工艺在所述衬底上形成包括所述有机金属前体的部分的导电层。 一种包括通过电介质层形成开口到接触点的方法; 引入无氟铜膜前体和共反应物; 并在开口中形成含铜种子层。 一种包括计算机的系统，所述计算机包括电耦合到印刷电路板的微处理器，所述微处理器包括由无氟有机金属前体形成的导电互连结构。
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10.发明授权公开(公告)号：US07682891B2
公开(公告)日：2010-03-23
申请号：US11647893
申请日：2006-12-28
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译： 这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。 在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。 在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。
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