公开(公告)号：US20090075412A1

公开(公告)日：2009-03-19

申请号：US12271464

申请日：2008-11-14

申请人： Jae Hoon LEE ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

发明人： Jae Hoon LEE ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/32

摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

摘要翻译： 提供了垂直III族氮化物发光器件及其制造方法。 发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。 未掺杂的GaN层在其顶表面上形成粗糙图案。

公开(公告)号：US20080064133A1

公开(公告)日：2008-03-13

申请号：US11933950

申请日：2007-11-01

申请人： Jae Hoon LEE ,  In Eung KIM ,  Yong Chun KIM ,  Hyun Kyung KIM ,  Moon Heon KONG

发明人： Jae Hoon LEE ,  In Eung KIM ,  Yong Chun KIM ,  Hyun Kyung KIM ,  Moon Heon KONG

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46

摘要： A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

摘要翻译： 倒装芯片型氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。 网状DBR反射层具有多个开放区域。 网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。 第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。 在网状DBR反射层和p型氮化物半导体层上形成欧姆接触层。

公开(公告)号：US20130082996A1

公开(公告)日：2013-04-04

申请号：US13368941

申请日：2012-02-08

申请人： Young-Su KIM ,  Jae Hoon LEE ,  Duc-Han CHO

发明人： Young-Su KIM ,  Jae Hoon LEE ,  Duc-Han CHO

IPC分类号： G09G3/36 ,  G06F3/038

CPC分类号： G09G3/3677

摘要： A driving apparatus for a display device includes: a signal controller that generates a pre-clock signal, a charge sharing control signal and a scanning start signal; a clock signal generator that generates a clock signal swinging between a first voltage and a second voltage based on the pre-clock signal and the charge sharing control signal; and a gate driver that generates gate signals based on the scanning start signal and the clock signal, where the clock signal generator includes: a voltage generator that generates a third voltage; and a clock generator that receives one of the first to third voltages in response to the pre-clock signal and the charge sharing control signal, and outputs an output signal based on the one of the first to third voltages as the clock signal, where the third voltage is lower than the first voltage and higher than the second voltage.

摘要翻译： 一种用于显示装置的驱动装置，包括：产生前时钟信号，电荷共享控制信号和扫描开始信号的信号控制器; 时钟信号发生器，其基于前时钟信号和电荷共享控制信号产生在第一电压和第二电压之间摆动的时钟信号; 以及栅极驱动器，其基于所述扫描开始信号和所述时钟信号生成栅极信号，其中所述时钟信号发生器包括：产生第三电压的电压发生器; 以及时钟发生器，其响应于前时钟信号和电荷共享控制信号接收第一至第三电压中的一个，并且基于第一至第三电压中的一个输出输出信号作为时钟信号，其中 第三电压低于第一电压并高于第二电压。

公开(公告)号：US20120307174A1

公开(公告)日：2012-12-06

申请号：US13357780

申请日：2012-01-25

申请人： Jae Hoon LEE ,  Whee-Won LEE ,  Duc-Han CHO

发明人： Jae Hoon LEE ,  Whee-Won LEE ,  Duc-Han CHO

IPC分类号： G02F1/1333

CPC分类号： G09G3/2003 ,  G09G3/3614 ,  G09G3/3677 ,  G09G2230/00 ,  G09G2300/0426 ,  G09G2310/0235 ,  G09G2310/0267 ,  G09G2310/0281 ,  G09G2320/0242

摘要： Disclosed are a display device and a driving method thereof. The display device includes: a display panel including a plurality of pixels, a plurality of gate lines, and a plurality of data lines; a first gate driver and a second gate driver which each transmit a gate signal to the gate lines and are at edge regions of the display panel; and a data driver which transmit data voltages to the data lines. The pixels include a plurality of first color pixels which display a first color and are connected to the first gate driver, a plurality of second color pixels which display a second color and are connected to the second gate driver, and a plurality of third color pixels which display a third color and comprise at least a pixel connected to the first gate driver and at least a pixel connected to the second gate driver.

摘要翻译： 公开了一种显示装置及其驱动方法。 显示装置包括：显示面板，包括多个像素，多个栅极线和多个数据线; 第一栅极驱动器和第二栅极驱动器，其将栅极信号发送到栅极线并且处于显示面板的边缘区域; 以及向数据线传输数据电压的数据驱动器。 像素包括显示第一颜色并连接到第一栅极驱动器的多个第一彩色像素，显示第二颜色并连接到第二栅极驱动器的多个第二彩色像​​素，以及多个第三颜色像素 其显示第三颜色并且包括至少连接到第一栅极驱动器的像素和连接到第二栅极驱动器的至少一个像素。

公开(公告)号：US20130015463A1

公开(公告)日：2013-01-17

申请号：US13528517

申请日：2012-06-20

申请人： Jae Hoon LEE

发明人： Jae Hoon LEE

IPC分类号： H01L29/205

CPC分类号： H01L29/872 ,  H01L27/0605 ,  H01L29/1075 ,  H01L29/1079 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： A nitride-based semiconductor device is provided. The nitride-based semiconductor device may include an aluminum silicon carbide (AlSixC1-x) pre-treated layer, and thus may ease a stress in a nitride semiconductor layer caused by a difference in properties, for example, a lattice constant and a coefficient of expansion, between the substrate and the nitride semiconductor layer formed on the substrate. Accordingly, an incidence of cracks created in the nitride semiconductor layer may be minimized and a surface roughness of the nitride semiconductor layer may be improved and thus, stability and performance of the nitride-based semiconductor device may be improved. The nitride-based semiconductor device may include a grade AlGaN layer of which an aluminum (Al) content gradually decreases from the substrate and thus, an incidence of cracks created in the nitride semiconductor layer may be minimized and the nitride semiconductor layer having a stable structure may be formed.

摘要翻译： 提供了一种氮化物基半导体器件。 氮化物基半导体器件可以包括铝碳化硅（AlSixC1-x）预处理层，并且因此可以减轻由于特性差异引起的氮化物半导体层中的应力，例如晶格常数和系数 在衬底和形成在衬底上的氮化物半导体层之间的扩展。 因此，可以使在氮化物半导体层中产生的裂纹的发生率最小化，并且可以提高氮化物半导体层的表面粗糙度，从而可以提高氮化物类半导体器件的稳定性和性能。 氮化物基半导体器件可以包括其中铝（Al）含量从衬底逐渐减小的等级AlGaN层，因此可以最小化在氮化物半导体层中产生的裂纹的入射，并且具有稳定结构的氮化物半导体层 可能形成。

公开(公告)号：US20120280233A1

公开(公告)日：2012-11-08

申请号：US13226108

申请日：2011-09-06

申请人： Jae Hoon LEE ,  Ki Se Kim

发明人： Jae Hoon LEE ,  Ki Se Kim

IPC分类号： H01L29/165

CPC分类号： H01L29/7787 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/872

摘要： A high efficiency heterostructure field effect transistor (HFET) capable of suppressing a leakage current and enhancing a current density by lowering a barrier between an electrode and a semiconductor layer is provided. The high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (SixC1-x) functional layer formed on the AlGaN layer.

摘要翻译： 提供了能够通过降低电极和半导体层之间的阻挡层来抑制漏电流并提高电流密度的高效异质结构场效应晶体管（HFET）。 高效HFET可以包括基板，形成在基板上的半绝缘氮化镓（GaN）层，形成在GaN层上的氮化镓铝（AlGaN）层，以及形成的碳化硅（SixC1-x）功能层 在AlGaN层上。

公开(公告)号：US20130135273A1

公开(公告)日：2013-05-30

申请号：US13460566

申请日：2012-04-30

申请人： Whee-Won LEE ,  Jae Hoon LEE ,  Young-Su KIM

发明人： Whee-Won LEE ,  Jae Hoon LEE ,  Young-Su KIM

IPC分类号： G09G5/00 ,  G09G3/36

CPC分类号： G09G3/3688 ,  G09G3/3614 ,  G09G2300/0426 ,  G09G2320/041

摘要： A liquid crystal display, including: pixels; a signal controller receiving an input image signal and an input control signal and outputting a processing image signal and a control signal; and a data driver changing the processing image signal to data voltage on the basis of the control signal to supply the data voltage to the pixel and sharing charges of odd channel data voltage of an odd channel and even channel data voltage of an even channel which have different polarities on the basis of a temperature.

摘要翻译： 液晶显示器，包括：像素; 信号控制器，接收输入图像信号和输入控制信号，并输出处理图像信号和控制信号; 数据驱动器基于控制信号将处理图像信号改变为数据电压，以将数据电压提供给像素，并且分配奇数通道的奇数通道数据电压和偶数通道的偶数通道数据电压的电荷， 基于温度的不同极性。

公开(公告)号：US20130034939A1

公开(公告)日：2013-02-07

申请号：US13550920

申请日：2012-07-17

申请人： Jae Hoon LEE ,  Ki Se KIM ,  Jung Hee LEE ,  Ki Sik IM ,  Dong Seok KIM

发明人： Jae Hoon LEE ,  Ki Se KIM ,  Jung Hee LEE ,  Ki Sik IM ,  Dong Seok KIM

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/2003

摘要： A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.

摘要翻译： 制造功率器件的方法包括在衬底上形成第一漂移区。 通过图案化第一漂移区域形成沟槽。 通过在沟槽中生长氮化镓（GaN）并且交替地设置第一漂移区和第二漂移区，形成第二漂移区。 源电极接触层形成在第二漂移区上。 在源电极接触层上形成源电极和栅电极。 在基板的与第一漂移区域相反的一侧上形成漏电极。

公开(公告)号：US20090248259A1

公开(公告)日：2009-10-01

申请号：US12409842

申请日：2009-03-24

申请人： Jae Hoon LEE

发明人： Jae Hoon LEE

IPC分类号： G06F19/00

CPC分类号： F16H61/431 ,  F16H61/4061 ,  F16H61/4148 ,  F16H61/421

摘要： A traveling system for construction equipment is provided, which can secure an initial traveling manipulability regardless of a low-speed traveling or a high-speed traveling. If the high-speed traveling is selected and the traveling is manipulated, the inclination angle of a swash plate of a hydraulic pump is variably controlled, so that the discharge flow rate of the hydraulic pump exceeds a predetermined flow rate in comparison to the low-speed traveling.

摘要翻译： 提供了一种用于施工设备的行驶系统，无论低速行驶还是高速行驶，都能确保初始的行驶操纵性。 如果选择高速行驶并且行驶被操纵，则液压泵的斜盘的倾斜角度被可变地控制，使得液压泵的排出流量与低速行驶相比， 速度旅行。

公开(公告)号：US20130032821A1

公开(公告)日：2013-02-07

申请号：US13351967

申请日：2012-01-17

申请人： Jae Hoon LEE

发明人： Jae Hoon LEE

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/205

CPC分类号： H01L29/872 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66143 ,  H01L29/8611

摘要： A Schottky barrier diode (SBD) is provided, which improves electrical characteristics and optical characteristics by securing high crystallinity by including an n-gallium nitride (GaN) layer and a GaN layer which are doped with aluminum (Al). In addition, by providing a p-GaN layer on the Al-doped GaN layer, a depletion layer may be formed when a reverse current is applied, thereby reducing a leakage current. The SBD may be manufactured by etching a part of the Al-doped GaN layer and growing a p-GaN layer from the etched part of the Al-doped GaN layer. Therefore, a thin film crystal is not damaged, thereby increasing reliability. Also, since dedicated processes for ion implantation and thermal processing are not necessary, simplified process and reduced cost may be achieved.

摘要翻译： 提供肖特基势垒二极管（SBD），其通过包括掺杂有铝（Al）的氮化镓（GaN）层和GaN层来确保高结晶度而改善电特性和光学特性。 此外，通过在Al掺杂的GaN层上设置p-GaN层，当施加反向电流时可以形成耗尽层，从而减少漏电流。 可以通过蚀刻Al掺杂的GaN层的一部分并且从Al掺杂的GaN层的蚀刻部分生长p-GaN层来制造SBD。 因此，薄膜晶体不被损坏，从而增加可靠性。 此外，由于不需要用于离子注入和热处理的专用工艺，可以实现简化的工艺和降低的成本。